Dummy Through Vias to Prevent Redistribution Line Cracking

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Solution Overview

Problem

The challenge in semiconductor packaging is the risk of cracking in redistribution lines due to thermal expansion, particularly in regions with mismatched coefficients of thermal expansion, such as the edges and corners of encapsulated integrated circuit dies, which affects the reliability of the devices.

Innovation Solution

Formation of dummy through vias in regions with mismatched thermal expansion coefficients to suppress encapsulant thermal expansion, thereby reducing the risk of cracking in redistribution lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If redistribution lines are formed in regions with mismatched thermal expansion coefficients (edges and corners), then device integration density is improved, but cracking risk increases due to thermal expansion stress

Engineering Contradiction:
Improveintegration densityVSAvoidcracking risk
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces a dummy via structure as an intermediary element between the redistribution line and the encapsulant. This dummy via acts as a stress-absorbing mediator that prevents direct transmission of thermal expansion stress from the encapsulant to the redistribution line, thereby eliminating cracking while preserving the beneficial thermal expansion mismatch for stress relief

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The dummy via is formed beforehand in the encapsulant at strategic locations before the redistribution lines are deposited. This pre-positioned structural feature provides cushioning protection against future thermal expansion stresses, preventing cracking before it can occur during device operation or testing

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If dummy through vias are added to suppress thermal expansion, then reliability of redistribution lines is improved, but device complexity increases

Engineering Contradiction:
Improveredistribution line integrityVSAvoidvia structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The dummy vias are not distributed uniformly across the entire device but are strategically placed only in specific regions where thermal expansion mismatch causes cracking (edges and corners). This localized approach provides the necessary reliability improvement while minimizing the increase in overall device complexity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The dummy via structure is a simplified copy of the functional via structure, using the same basic via formation process and materials but without the complex multi-layer metallization and electrical connection requirements of full functional vias. This allows reliable stress suppression with reduced structural complexity

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dummy through vias help maintain the reliability of semiconductor devices by preventing cracking in redistribution lines during operation or testing, ensuring the integrity and performance of the integrated circuit packages.

Implementation Method 1

dummy through vias formed through an encapsulant in regions where there is a mismatch in coefficients of thermal expansion

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS12512331B2Dummy through vias for integrated circuit packages and methods of forming the same
Publication Date: 2025.12.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12512331B2 patent drawing
  • US12512331B2 patent drawing
  • US12512331B2 patent drawing

AI summary

In an embodiment, a device includes: an integrated circuit die including a die connector; a first through via adjacent the integrated circuit die; an encapsulant encapsulating the first through via and the integrated circuit die; and a redistribution structure on the encapsulant, the redistribution structure including a redistribution line, the redistribution line physically and electrically coupled to the die connector of the integrated circuit die, the redistribution line electrically isolated from the first through via, the redistribution line crossing over the first through via.