DUV LED Trench Layout for ESD Protection Without Light Absorption
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Solution Overview
Problem
Conventional deep ultraviolet (DUV) LED devices suffer from uneven light distribution, low luminous intensity, and poor electrostatic resistance due to excessive light absorption by anti-electrostatic discharge elements, which leads to malfunction under heat and UV radiation.
Innovation Solution
The LED device incorporates a substrate with an electrically conductive layer featuring a trench structure and an anti-electrostatic discharge element positioned to minimize light and heat absorption, with the LED chip and anti-electrostatic discharge element arranged to reduce overlap and absorption, enhancing light extraction efficiency and preventing malfunction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the anti-electrostatic discharge element is placed in the conventional LED device, then electrostatic protection is provided, but light absorption increases causing malfunction under heat and UV radiation
Solution Approach 1:
The anti-electrostatic discharge element is extracted from the light path area and repositioned to a location where it does not absorb light from the LED chip. This separation removes the harmful interaction between the protective element and the light emission, allowing electrostatic protection to function without causing malfunction from light absorption.
2Area of stationary object
If the DUV flip chip size is reduced, then device integration is improved, but the ratio of light emitted from side surfaces increases causing uneven light distribution
Solution Approach 1:
The patent applies local quality by positioning the anti-electrostatic discharge element in a specific location away from the light emission path. This localized placement ensures that the protective element does not interfere with the light distribution pattern, maintaining uniform illumination while providing electrostatic protection.
3Object-affected harmful factors
If the anti-electrostatic discharge element is embedded into the substrate, then light absorption is reduced, but heat dissipation becomes unfavorable causing acceleration of malfunction
Solution Approach 1:
The patent introduces an intermediary positioning strategy where the anti-electrostatic discharge element is placed in a location that balances both light absorption and heat dissipation considerations. By positioning it away from the direct light path but with adequate thermal pathways, the element provides protection without suffering from excessive heat accumulation that would accelerate malfunction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light distribution and extraction efficiency while preventing the malfunction of anti-electrostatic discharge elements, resulting in a more reliable and efficient DUV LED device.
Implementation Method 1
A light-emitting diode (LED) device is a solid-state lighting device made of semiconductor materials
Implementation Method 2
emits light from a backside of the DUV LED device to reduce light absorption of P-type gallium nitride-based materials
Implementation Method 3
the anti-electrostatic discharge element is prone to malfunction and damage when exposed to heat and UV radiation from the DUV LED chip
Implementation Method 4
a major portion of electrical energy is transformed into thermal energy
Implementation Method 5
an anti-electrostatic discharge element is usually placed therein
Data Source
AI summary
An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.