III-Nitride DUV LED Layer Structure for Higher Light Output
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Deep ultraviolet light-emitting devices (DUV-LEDs) using III-nitride semiconductors face challenges in achieving high light output power due to low light emission efficiency, and existing solutions have not adequately addressed this issue.
Innovation Solution
A III-nitride semiconductor light-emitting device is designed with an AlN guide layer between the light emitting layer and the electron blocking layer, where the Al composition ratio of the barrier layers is set higher than that of the electron blocking layer, and specific Al composition ratios and thicknesses are optimized to enhance light output power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the Al composition ratio of the electron blocking layer is set higher than that of the barrier layers to improve electron blocking performance, then electron overflow is reduced, but light output power decreases due to reduced electron injection efficiency
Solution Approach 1:
The patent applies parameter changes by inverting the conventional Al composition ratio relationship between the electron blocking layer and barrier layers. Specifically, it sets the Al composition ratio of the barrier layers (b) to be higher than that of the electron blocking layer (z), where 0.50≤z≤0.80 and z+0.01≤b≤0.95. This parameter inversion resolves the contradiction by improving electron injection efficiency while maintaining adequate electron blocking performance, thereby increasing light output power.
2Loss of energy
If the Al composition ratio of the barrier layers is increased to improve light emission efficiency, then internal quantum efficiency improves, but device complexity increases due to tighter composition control requirements
Solution Approach 1:
The patent defines specific parameter ranges for the Al composition ratios: 0.50≤z≤0.80 for the electron blocking layer and z+0.01≤b≤0.95 for the barrier layers. These parameter specifications provide clear design guidelines that balance light emission efficiency improvement with manufacturability, reducing the complexity of composition control while achieving high performance.
3Reliability
If the AlN guide layer thickness is increased to improve light extraction efficiency, then more light is extracted, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies a thickness range of 0.5 nm≤d≤2.0 nm for the AlN guide layer. This parameter definition balances light extraction efficiency with manufacturing feasibility, providing a practical thickness range that achieves good optical performance without imposing excessive precision requirements on the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves light output power compared to conventional devices, particularly for devices emitting light in the 200 nm to 350 nm range, by reducing electron overflow and enhancing electron injection efficiency.
Implementation Method 1
an AlN guide layer; an electron blocking layer... the Al composition ratio of the barrier layers is set higher than that of the electron blocking layer... reducing electron overflow and enhancing electron injection efficiency
Data Source
AI summary
Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50≤z≤0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01≤b≤0.95).