Patterned Metal-Oxide Thin Films via DUV Photopatterning
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Solution Overview
Problem
Current processes for obtaining patterned metal-oxide thin films on substrates face limitations in resolution, cost-effectiveness, and material usage, particularly due to low photosensitivity and the need for high-resolution applications in semiconductor devices.
Innovation Solution
A process involving the preparation of a metal oxide chelate solution using methacrylic acid as a ligand, followed by water hydrolysis to form metal oxo-clusters, doping with specific metal elements, and patterning with deep ultra-violet (DUV) wavelengths, allowing for improved resolution and cost-effectiveness by mitigating unwanted crosslinking and dewetting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photopatterning processes are used, then the manufacturing process is simple, but the resolution is limited due to low photosensitivity of the precursor solution
Solution Approach 1:
The patent changes the chemical parameters of the precursor solution by introducing a photoinitiator system that absorbs DUV light, transforming the solution from low photosensitivity to high photosensitivity. This enables resolution improvement while maintaining process simplicity.
Solution Approach 2:
The patent introduces a photoinitiator as an intermediary substance that mediates between DUV light and the metal oxide precursor. The photoinitiator absorbs DUV light and triggers crosslinking, acting as a bridge that enables high-resolution patterning without directly modifying the metal oxide precursor.
2Manufacturing precision
If DUV irradiation is used for patterning, then the resolution is improved, but unwanted crosslinking occurs in non-irradiated areas
Solution Approach 1:
The patent applies local quality by making the crosslinking property spatially selective. The photoinitiator is designed to activate crosslinking only in DUV-irradiated areas through localized energy absorption, while non-irradiated areas remain uncrosslinked and removable during development.
Solution Approach 2:
The patent uses partial action by controlling the DUV irradiation dose and photoinitiator concentration to achieve crosslinking only where needed. The irradiation is applied selectively to patterned areas, and the photoinitiator concentration is optimized to prevent excessive crosslinking in non-irradiated regions.
3Manufacturing precision
If high-resolution patterning is achieved through DUV photopatterning, then the manufacturing precision is improved, but the process complexity and material usage increase
Solution Approach 1:
The patent merges the patterning and crosslinking steps into a single DUV irradiation step. The photoinitiator enables both pattern formation and structural stabilization simultaneously, reducing the number of separate process steps while maintaining high resolution.
Solution Approach 2:
The photoinitiator system provides self-service by automatically activating crosslinking in irradiated areas without requiring additional processing steps. The DUV irradiation simultaneously patterns the material and triggers the crosslinking reaction, eliminating the need for separate crosslinking equipment or procedures.
4Reliability
If conventional metal oxide precursors are used, then the material cost is low, but the photosensitivity at working wavelength is insufficient
Solution Approach 1:
The patent creates a composite precursor solution combining metal oxide precursors with a photoinitiator. This composite material maintains the low cost of conventional metal oxide precursors while adding DUV photosensitivity through the photoinitiator component, achieving both affordability and high resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enhances the resolution and semiconductor properties of patterned metal-oxide thin films, enabling direct write integration on flexible substrates under atmospheric conditions, with controlled homogeneity and electrical properties, while reducing material usage and process complexity.
Implementation Method 1
preparing a metal oxide chelate solution by complexing metal oxide precursors with a ligand in an alcoholic solvent, wherein the ligand is methacrylic acid
Implementation Method 2
preparing a metal oxo-cluster solution by submitting the metal oxide chelate solution to water hydrolysis
Implementation Method 3
patterning the coated substrate by irradiating it with deep ultra-violet (DUV) wavelengths
Implementation Method 4
post-annealing or post-exposing by DUV the developed patterned substrate, for obtaining a fully inorganic patterned substrate
Data Source
Figure 1a~1c
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AI summary
A process for obtaining patterned metal-oxide thin films deposited onto substrates is provided, as well as filmed substrates obtained thereof, and semiconductor devices comprising them. The process comprises the steps of: - preparing a metal oxide chelate solution by complexing metal oxide precursors with a ligand in an alcoholic solvent, wherein the ligand is methacrylic acid, for obtaining a metal oxide chelate; - preparing a metal oxo-cluster solution by submitting the metal oxide chelate solution to water hydrolysis, for obtaining a partially-condensed metal oxide chelate; - preparing a doped-metal oxide solution by doping the metal oxo-cluster solution with a doping material comprising a metal element; - depositing the doped-metal oxide solution onto a substrate, for obtaining a substrate coated with a metal oxide thin film; - patterning the coated substrate by irradiating it with deep ultra-violet (DUV) wavelengths, for obtaining a patterned coating; - immersing the substrat comprising a patterned coating into a development media, for obtaining a developed patterned substrate; - post-annealing the developed patterned substrate, for obtaining a fully inorganic patterned substrate. The present invention belongs to the field of semiconductor nanodevices.