Dy-Doped Perovskite Dielectric for Thin-MLCC Reliability
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Solution Overview
Problem
As multilayer ceramic capacitors (MLCCs) are miniaturized to achieve higher capacitance, the thinning of dielectric layers increases the electric field, posing a challenge in securing the reliability of the dielectric layer, particularly at high temperatures.
Innovation Solution
A ceramic electronic component with a perovskite structure dielectric layer, where Dysodium is solid-solubilized, is developed, with a specific X-ray count ratio of Dysodium at the A-site to B-site, forming an N-type semiconductor to reduce the electric field load and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the thickness of the dielectric layer is reduced to achieve miniaturization and high capacitance, then the capacitance and miniaturization are improved, but the electric field applied to the dielectric increases and reliability deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric layer by incorporating specific amounts of Nb (niobium) and Ta (tantalum) elements into the barium titanate structure. This compositional modification allows the dielectric to maintain high breakdown voltage and reliability even at reduced thicknesses of 0.6 μm or less, while achieving the required capacitance values for miniaturized MLCCs.
Solution Approach 2:
The patent creates a composite dielectric material by combining barium titanate with Nb and Ta elements forming solid solution structures. This composite approach leverages the high dielectric constant of barium titanate while the Nb-Ta addition provides enhanced electrical stability and breakdown resistance, enabling thin-layer high-reliability capacitors.
2Volume of moving object
If the thickness of the dielectric layer is reduced to achieve miniaturization, then the size is reduced, but the electric field intensity increases and dielectric breakdown risk increases
Solution Approach 1:
The patent modifies the dielectric's electrical parameters through Nb-Ta doping, which increases the breakdown voltage threshold. This parameter change allows the thin dielectric layer to withstand higher electric field intensities without breakdown, enabling miniaturization while controlling the harmful electric field effects.
3Productivity
If the dielectric layer is thinned to increase capacitance density, then the capacitance per volume is improved, but the insulation resistance decreases and reliability at high temperature deteriorates
Solution Approach 1:
The patent optimizes the Nb and Ta content parameters within specific ranges (0.01-5.0 wt% each) to achieve the right balance between capacitance density and high-temperature reliability. This precise parameter control ensures that the dielectric maintains adequate insulation resistance and withstands high-temperature operation while providing high capacitance in a miniaturized form factor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively improves the reliability of the dielectric layer by lowering the electric field load, maintaining high insulation resistance and extending the lifespan of the component even at reduced thicknesses, thus ensuring excellent high-temperature reliability.
Implementation Method 1
The dielectric layer has a perovskite structure represented by a formula ABO3 as a main phase, and includes a region in which Dy is solid solubilized
Implementation Method 2
forming an N-type semiconductor to reduce the electric field load and enhance reliability
Data Source
AI summary
A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer has a perovskite structure represented by a general formula ABO3 as a main phase, and includes a region in which Dy is solid solubilized. In the region in which the Dy is solid solubilized, an X-ray count of Dy solid-solubilized in an A-site of the perovskite structure measured by using Scanning Transmission Electron Microscopy-Energy Dispersive X-ray Spectroscopy (STEM-EDS) is AD, an X-ray count of Dy solid-solubilized in a B-site of the perovskite structure is BD, and an average value of AD/BD is 1.6 or more and 2.0 or less.