Dynamic Bit Line Precharge Timing in Memory Devices
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Solution Overview
Problem
Existing memory devices face inefficiencies in bit line precharge operations during program operations, leading to suboptimal performance and increased power consumption due to fixed timing approaches that do not account for varying bit line loading conditions.
Innovation Solution
A memory device and method that dynamically adjust the interval between bit line precharge operations based on the progress of the program operation, utilizing page buffer groups to perform precharge operations at different time points and adjust the timing to match the changing bit line loading, thereby optimizing precharge speed and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If fixed timing approach is used for bit line precharge operations, then device complexity is reduced, but precharge performance deteriorates and power consumption increases
Solution Approach 1:
The patent implements dynamic timing adjustment for bit line precharge operations by monitoring program operation progress and adjusting the interval between precharge operations accordingly. The control logic transitions from fixed timing to variable timing based on real-time program status, optimizing precharge speed while adapting to changing bit line loading conditions.
Solution Approach 2:
The patent changes the timing parameter (interval between precharge operations) based on program operation progress. By adjusting this parameter dynamically according to program status and bit line loading conditions, the system achieves optimal precharge performance without requiring overly complex control mechanisms.
2Ease of operation
If fixed timing approach is used for bit line precharge operations, then ease of operation is improved, but power consumption increases
Solution Approach 1:
The patent dynamically adjusts the timing parameter (interval between precharge operations) based on program operation progress and bit line loading conditions. This parameter adaptation allows the system to reduce power consumption by performing precharge operations only when necessary, rather than using a fixed timing approach that consumes excessive energy.
Solution Approach 2:
The control logic incorporates feedback from program operation progress monitoring to adjust precharge timing. By continuously monitoring program status and bit line loading conditions, the system determines the optimal moments to perform precharge operations, thereby reducing unnecessary power consumption while maintaining ease of operation through automated control.
3Productivity
If dynamic interval adjustment is implemented for bit line precharge operations, then precharge performance is improved, but device complexity increases
Solution Approach 1:
The patent implements dynamic interval adjustment by monitoring program operation progress and adapting the timing between precharge operations. This dynamic approach improves program operation speed by optimizing precharge timing according to actual bit line loading conditions, while the control logic remains manageable through systematic progress tracking.
4Loss of energy
If dynamic interval adjustment is implemented for bit line precharge operations, then power consumption is reduced, but device complexity increases
Solution Approach 1:
The patent adjusts the timing parameter (interval between precharge operations) dynamically based on program operation progress. This parameter adaptation reduces power consumption by performing precharge operations only when bit line loading conditions warrant it, while the control logic complexity is managed through systematic monitoring and adjustment based on predefined progress thresholds.
Data Source
AI summary
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell array, a plurality of page buffer groups, and a program operation controller. The memory cell array may include a plurality of memory cells. The page buffer groups may be coupled to the plurality of memory cells through a plurality of bit line groups, and may be configured to perform bit line precharge operations on the plurality of bit line groups. The program operation controller may be configured to control the plurality of page buffer groups to perform the bit line precharge operations initiated at different time points during a program operation on the plurality of memory cells, and to adjust an interval between initiation time points of the bit line precharge operations depending on a progress of the program operation.