Dynamic Gate Drive System for Semiconductor Switches

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Solution Overview

Problem

Existing semiconductor switch circuit topologies in high-power applications face limitations in efficiency and phase current levels due to fixed Gate resistance settings, which can lead to voltage overshoot and damage to sensitive hardware.

Innovation Solution

A dynamic Gate drive system and control method that adjusts Gate resistance values in real-time based on circuit measurements, such as temperature and phase current, using a microcontroller and lookup tables to optimize switching operations and reduce voltage overshoot.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Gate resistance is chosen to satisfy worst-case voltage and current operating conditions, then voltage overshoot protection is improved, but maximum efficiency and phase current levels are limited

Engineering Contradiction:
Improvevoltage overshoot protectionVSAvoidphase current levels
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements dynamic Gate resistance adjustment by switching between multiple Gate resistors (Rg1, Rg2, Rg3) based on real-time operating conditions. The microcontroller monitors phase current, DC bus voltage, and temperature, then selects appropriate Gate resistors to optimize switching behavior for each operating region, resolving the contradiction between fixed Gate resistance protection and dynamic performance requirements

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system changes the Gate resistance parameter dynamically based on operating conditions. By adjusting Gate resistance values according to phase current magnitude, DC bus voltage level, and temperature, the system optimizes switching speed and voltage overshoot characteristics for each specific operating region, enabling both protection and high performance

Inventive Principle:
Principle #35Parameter changes

2Reliability

If Gate resistance is increased to protect from voltage overshoot, then hardware damage protection is improved, but switching efficiency and operational performance deteriorate

Engineering Contradiction:
Improvehardware protectionVSAvoidswitching efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The system dynamically changes Gate resistance parameters based on real-time operating conditions. By selecting lower Gate resistance values when operating conditions permit (lower phase current, appropriate temperature), the system reduces switching losses and improves efficiency. When high phase current or voltage overshoot risk is detected, higher Gate resistance values are selected to protect hardware, thus resolving the contradiction between protection and efficiency

Inventive Principle:
Principle #35Parameter changes

3Reliability

If fixed Gate resistance is used for worst-case conditions, then device protection is improved, but adaptability to different operating conditions deteriorates

Engineering Contradiction:
Improvedevice protectionVSAvoidoperating condition adaptability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The system transitions from fixed Gate resistance to dynamic Gate resistance selection. The microcontroller continuously monitors operating conditions (phase current, DC bus voltage, temperature) and switches between multiple Gate resistors to adapt to different operating regions. This dynamic adaptation maintains device protection across all conditions while optimizing performance for each specific operating scenario

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent segments the operating conditions into different regions based on phase current magnitude, DC bus voltage level, and temperature. Each operating region has pre-determined optimal Gate resistor combinations stored in lookup tables. This segmentation enables the system to select the most appropriate Gate resistance for each specific operating region, improving both adaptability and protection

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10505538B1Dynamic gate drive system and control method
Publication Date: 2019.12.10 GM GLOBAL TECHNOLOGY OPERATIONS LLC
  • US10505538B1 patent drawing
  • US10505538B1 patent drawing
  • US10505538B1 patent drawing

AI summary

A switching circuit includes a semiconductor switch having a Gate terminal, and includes first, second, third, and fourth Gate resistors. The Gate resistors have upstream and downstream ends relative to a location of the semiconductor switch or a driven load. The downstream ends connect to the Gate terminal. First, second, third, and fourth buffer switches have Gate terminals and Source terminals, with the Source terminals connected to the upstream ends of the first, second, third, and fourth Gate resistors, respectively. An optional Gate driver integrated circuit (IC) connects to the Gate terminals of the buffer switches. A microcontroller, responsive to circuit measurements, selects switching control values and Gate resistor identities based on the measurements, and transmits switching control signals and a Gate resistor selection signal to select on/off states of the buffer switches and an optimum switching speed for the semiconductor switch.