Dynamic Latch Layout to Eliminate CNOD Leakage Paths

The patent divides the oxide diffusion region into separate, non-continuous segments for different functional units. Specifically, the first oxide diffusion region is isolated from the second oxide diffusion region, preventing the formation of parasitic transistors at the interface while maintaining the manufacturing efficiency of oxide diffusion technology.

The patent applies different oxide diffusion configurations to different regions of the semiconductor device. The first functional unit has its own isolated oxide diffusion region, while the second functional unit has a separate oxide diffusion region, allowing each region to be optimized locally without affecting other regions, thus eliminating parasitic transistor formation.

The patent segments the oxide diffusion regions so that the first oxide diffusion region and the second oxide diffusion region are spatially separated and do not connect. This segmentation prevents the formation of parasitic transistors that would occur with continuous oxide diffusion, while still achieving high device integration through careful layout of the separated regions.

The patent extracts or removes the harmful continuous oxide diffusion path between functional units. By taking out the connecting oxide diffusion region that would create parasitic transistors, the design maintains functional unit independence and eliminates leakage while preserving integration benefits.