Dynamic Light Source Parameter Control for Wafer Patterning
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Solution Overview
Problem
In photolithography, existing technologies face challenges in accurately controlling light source parameters to correct errors in wafer patterning without modifying the lithography exposure apparatus or its optical components, which affects the precision and quality of semiconductor circuitry production.
Innovation Solution
A method that involves an optical source producing a pulsed light beam, scanning it across a wafer, and dynamically modifying performance parameters such as spectral features, energy, and wavelength based on real-time measurements of physical properties, using a control system that adjusts the light source parameters to match target values, thereby correcting patterning errors on a field-to-field or pulse-to-pulse basis without altering the lithography apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If light source parameters are controlled to correct patterning errors, then manufacturing precision is improved, but device complexity increases due to the need for dynamic parameter adjustment systems
Solution Approach 1:
The patent implements feedback control by measuring physical properties of previously exposed wafers and using this information to dynamically adjust light source parameters for subsequent exposures. The control system receives determined values of physical properties (such as critical dimension errors, overlay errors, or focus errors) and modifies performance parameters (wavelength, bandwidth, pulse duration, energy) accordingly to correct patterning errors in real-time during wafer scanning.
Solution Approach 2:
The patent applies dynamics by transitioning from static light source parameters to dynamic parameter adjustment during the scanning process. The system modifies performance parameters of the pulsed light beam on-the-fly based on real-time feedback from wafer measurements, enabling adaptive correction of patterning errors across different fields or pulses without requiring physical modification of the lithography apparatus.
2Productivity
If real-time parameter modification is implemented, then productivity is improved through error correction, but use of energy increases due to additional control operations
Solution Approach 1:
The patent applies preliminary action by measuring and analyzing physical properties of previously exposed wafer areas before exposing new areas. The control system uses this advance information to pre-calculate and prepare appropriate light source parameter adjustments, enabling proactive error correction rather than reactive adjustments. This allows the system to optimize exposure parameters before actual patterning occurs, improving overall productivity while managing energy consumption through intelligent control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables real-time arbitrary spectrum generation and precise control of light source parameters, enhancing the capability and flexibility of wafer exposure, allowing for accurate correction of patterning errors and improved semiconductor feature precision without modifying the lithography equipment.
Implementation Method 1
the light source is a laser source and the pulsed light beam is a pulsed laser beam
Implementation Method 2
Photolithography is the process by which semiconductor circuitry is patterned on a substrate such as a silicon wafer. A photolithography light source provides the deep ultraviolet (DUV) light used to expose a photoresist on the wafer.
Data Source
AI summary
A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.