Dynamic Magnetron Control for PVD Deposition Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor processing is achieving uniformity in sputtering and etching processes due to non-orthogonal particle deposition and varying process conditions, leading to non-uniform features and dielectric layers in submicron and smaller dimensions, which complicates the production of next-generation VLSI and ULSI devices.
Innovation Solution
A method and system that utilize a moveable magnetron and power supply control within a process chamber, where the position of the magnetron is determined relative to a substrate reference location, and power parameters such as DC source power, RF bias power, or electromagnetic coil current are modulated based on this position to control deposition and etching rates, thereby addressing non-uniformities in substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sputtering is used to deposit material on substrate, then material deposition is achieved, but non-uniform deposition occurs due to particles traveling in varying directions rather than orthogonal to substrate surface
Solution Approach 1:
The patent applies local quality by using a moveable magnetron that can be positioned at different locations relative to the substrate. By adjusting the magnetron's position, the ion bombardment and material ejection are localized to specific areas, enabling selective deposition control across different regions of the substrate. This resolves the uniformity issue by allowing targeted adjustment of deposition characteristics in different zones.
Solution Approach 2:
The patent implements dynamics by making the magnetron moveable rather than fixed. The magnetron can be dynamically repositioned during the sputtering process to optimize particle direction and deposition uniformity. This dynamic adjustment capability allows the system to compensate for non-orthogonal particle travel and achieve more uniform deposition across the substrate surface.
2Adaptability or versatility
If process conditions are varied to improve deposition control, then processing flexibility increases, but processing uniformity deteriorates due to varying process conditions affecting different substrate locations
Solution Approach 1:
The patent employs feedback control by using a controller that receives position information from the two-axis driver and automatically adjusts power supply parameters based on the magnetron's position. This closed-loop feedback system ensures that process conditions are dynamically optimized for each location, maintaining processing uniformity while allowing for adaptive control across different substrate regions.
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting power supply parameters (such as power set point) based on the magnetron's position. The controller modifies these parameters in real-time as the magnetron moves to different locations, enabling flexible processing adaptation while maintaining uniformity through automated parameter optimization for each position.
3Manufacturing precision
If magnetron position is controlled to improve deposition uniformity, then processing precision increases, but system complexity increases due to moveable magnetron and real-time power modulation
Solution Approach 1:
The patent applies universality by designing a controller that performs multiple functions: it manages the two-axis driver for magnetron positioning, receives position feedback, determines appropriate power parameters based on position, and controls the power supply. This multi-functional controller integrates several control tasks into a single system, reducing overall system complexity while maintaining precise deposition uniformity through coordinated position and power control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces or eliminates process rate non-uniformities, such as center-fast, center-slow, and asymmetrical skew, by real-time control of power supplies, resulting in more uniform material deposition or etching across the substrate, enhancing the precision and reliability of semiconductor feature formation.
Implementation Method 1
a source material, such as a target, is bombarded by ions strongly accelerated by an electric field
Implementation Method 2
A source material, such as a target, is bombarded by ions strongly accelerated by an electric field
Implementation Method 3
Sputtering, also known in one application as physical vapor deposition (PVD), is a method of forming metallic features in integrated circuits
Implementation Method 4
Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
Data Source
AI summary
A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.