Dynamic Parameter Adjustment for Non-Volatile Memory Endurance
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Solution Overview
Problem
Non-volatile memory devices face issues with endurance and retention as the number of erase and program operations increases, leading to potential data failure and decreased reliability.
Innovation Solution
A semiconductor device and method that dynamically adjust DC and AC timing characteristics of parameters such as voltage and current levels to optimize operations, using a controller to monitor memory cell characteristics and generate data sets to change these parameters in response, thereby enhancing endurance and retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of erase and program operations increases to meet storage demands, then storage capacity and productivity are improved, but endurance and reliability deteriorate due to data failure in non-volatile memory cells
Solution Approach 1:
The patent applies dynamics by making the memory device's operational parameters adjustable during operation. The control block dynamically changes DC characteristics (voltage levels, current levels) and AC timing characteristics (timing values of control signals) based on monitored endurance and retention properties. This allows the system to adapt to wear from repeated operations, resolving the contradiction between productivity and reliability by enabling the memory to maintain reliability through dynamic parameter adjustment even as operations increase.
Solution Approach 2:
The patent directly applies parameter changes by modifying physical parameters (voltage levels, current levels, timing values) of the memory device based on monitored performance characteristics. The control block generates data sets containing commands to change parameters such as program voltage, erase voltage, read voltage, and their corresponding timing values. This resolves the contradiction by allowing the system to optimize reliability through parameter adjustments while maintaining productivity.
2Productivity
If the number of erase and program operations increases to improve storage throughput, then productivity is improved, but data retention and reliability worsen due to increased fail data
Solution Approach 1:
The patent applies feedback by implementing a monitoring mechanism that continuously tracks the endurance and retention properties of memory cells. Based on this feedback, the control block generates data sets to adjust operational parameters. This closed-loop feedback system resolves the contradiction between productivity and data retention by allowing the system to respond to actual memory cell conditions and adjust parameters to maintain reliability even under high throughput operations.
Solution Approach 2:
The patent makes the memory system dynamic by enabling real-time adjustment of operational parameters based on monitored retention properties. The control block dynamically modifies DC characteristics and AC timing characteristics in response to retention monitoring results, allowing the system to maintain data retention reliability while sustaining high productivity through adaptive parameter optimization.
3Ease of operation
If fixed operational parameters are used to simplify device operation, then ease of operation is improved, but reliability deteriorates as memory cells degrade from repeated operations
Solution Approach 1:
The patent applies self-service by enabling the memory device to automatically monitor its own endurance and retention properties and generate appropriate parameter adjustments without external intervention. The control block within the device autonomously creates data sets to modify operational parameters based on monitored conditions. This resolves the contradiction by maintaining ease of operation (no external complexity added) while improving reliability through the device's self-adjusting capability.
Solution Approach 2:
The patent introduces dynamics into an otherwise static operational parameter system. Instead of fixed parameters, the system now dynamically adjusts DC characteristics and AC timing characteristics based on monitored memory cell conditions. This resolves the contradiction between ease of operation and reliability by allowing automatic adaptation without requiring user intervention or complex external control systems.
4Reliability
If operational parameters are dynamically adjusted to improve reliability, then endurance and retention are improved, but device complexity increases due to additional control mechanisms
Solution Approach 1:
The patent applies universality by designing the control block to perform multiple functions: monitoring endurance properties, monitoring retention properties, generating data sets for parameter adjustment, and coordinating with the access block for actual parameter changes. This multi-functional approach resolves the contradiction between reliability improvement and device complexity by consolidating control functions into a single integrated block rather than requiring separate complex systems for each function.
Data Source
AI summary
A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.