Dynamic Semiconductor Memory Device Temperature Sensor Voltage Adjustment
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Solution Overview
Problem
Dynamic semiconductor memory devices, such as DRAM, face increased charge leakage in capacitors as temperature rises, leading to data loss due to inefficient refresh operations.
Innovation Solution
A dynamic semiconductor memory device with a temperature sensor unit and voltage generator that adjusts sensing supply voltages in response to temperature changes, applying higher voltages during sense amplification to compensate for leakage, thereby maintaining charge levels in memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the sensing supply voltage is increased to compensate for charge leakage at high temperatures, then the reliability of data storage is improved, but the power consumption increases
Solution Approach 1:
The sensing supply voltage is made dynamically adjustable based on temperature conditions. The voltage generator receives temperature information and dynamically switches between a first sensing supply voltage (at normal temperatures) and a second sensing supply voltage higher than the first (at high temperatures), allowing the system to adapt to varying thermal conditions while minimizing unnecessary power consumption.
Solution Approach 2:
The system changes the voltage parameter of the sensing supply based on temperature. When temperature exceeds a threshold, the voltage generator outputs a higher sensing supply voltage to compensate for increased charge leakage in the capacitors, thereby maintaining data reliability without permanently increasing power consumption.
2Reliability
If a temperature sensor and voltage generator are added to adjust sensing voltages, then charge leakage compensation is improved, but the device complexity increases
Solution Approach 1:
The temperature sensor unit and voltage generator are integrated within the memory device architecture. The voltage generator receives temperature information from the sensor and directly adjusts the sensing supply voltage, merging sensing and voltage regulation functions into a coordinated system that compensates for charge leakage without requiring external complex control circuits.
Solution Approach 2:
The memory device performs self-diagnosis and self-correction by using its internal temperature sensor to detect thermal conditions and automatically adjusting the sensing supply voltage through the voltage generator. This self-service mechanism compensates for charge leakage without requiring external intervention or complex external control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces data loss by compensating for increased charge leakage at higher temperatures, enhancing the reliability of dynamic semiconductor memory devices and memory systems.
Implementation Method 1
a temperature sensor unit configured to sense a temperature and generate a temperature sensing signal
Implementation Method 2
As the temperature of the dynamic semiconductor memory device increases, the charges accumulated in the capacitors of the plurality of dynamic memory cells may leak more quickly
Data Source
AI summary
Provided are a dynamic semiconductor memory device and a memory system including the same. The dynamic semiconductor memory device includes a memory cell array including a first memory cell array block including a plurality of first dynamic memory cells connected between a plurality of first word lines and a plurality of first bit lines, a second memory cell array block including a plurality of second dynamic memory cells connected between a plurality of second word lines and a plurality of second bit lines, and a sense amplification block including a plurality of sense amplifiers configured to amplify voltages of the plurality of first bit lines and voltages of the plurality of second bit lines to a first sensing supply voltage or at least one second sensing voltage higher than the first sensing supply voltage; a temperature sensor unit configured to sense a temperature and generate a temperature sensing signal; and a voltage generator configured to generate the first sensing supply voltage or the at least one second sensing supply voltage in response to the temperature sensing signal and to apply the first sensing supply voltage or the at least one second sensing supply voltage to the memory cell array and to apply a sensing ground voltage to the memory cell array.