Dynamic Pre-charge Voltage Generation for Memory Power Saving
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Solution Overview
Problem
Conventional pre-charge voltage circuits in semiconductor memory devices experience significant leakage current, leading to excessive power consumption during both non-power-saving and power-saving modes, which is undesirable as it results in wasted power during the latter.
Innovation Solution
A voltage generator that adjusts the pre-charge voltage based on the operational mode of the memory device, reducing leakage current by setting the voltage to a value closer to the logic high or low state during power-saving modes, and to an intermediate value during non-power-saving modes for faster access.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If pre-charge voltage is maintained at intermediate value during power-saving mode, then faster data access is achieved, but leakage current increases leading to excessive power consumption
Solution Approach 1:
The pre-charge voltage is made dynamic by switching between two values based on operational mode: an intermediate value (e.g., VDD/2) during non-power-saving modes for fast access, and a logic high or low value during power-saving modes to minimize leakage current. This dynamic adjustment resolves the contradiction between speed and energy loss.
Solution Approach 2:
The voltage parameter of the pre-charge signal is changed based on the operational mode of the memory device. By modifying the voltage level from intermediate to logic high/low during power-saving modes, the system reduces leakage current while maintaining the capability for fast access when needed.
2Loss of energy
If pre-charge voltage is set to logic high or low during non-power-saving mode, then power consumption is reduced, but data access speed decreases
Solution Approach 1:
The system dynamically switches the pre-charge voltage between logic high/low values during power-saving modes and intermediate values during non-power-saving modes. This ensures optimal power consumption during idle periods while maintaining fast access speeds when the memory is actively being accessed.
Solution Approach 2:
The voltage parameter is adjusted based on operational mode: set to logic high or low during power-saving modes to minimize power consumption, and changed to an intermediate value during non-power-saving modes to enable faster data access operations.
3Speed
If internal circuitry is kept in ready state, then quick data access is enabled, but power consumption increases significantly
Solution Approach 1:
The pre-charge voltage circuit transitions from a static ready state to a dynamic state that adapts to operational requirements. During power-saving modes, the voltage is set to logic high or low to reduce power consumption while still enabling quick access when needed by switching to intermediate values.
Solution Approach 2:
The voltage parameter of the pre-charge circuit is changed based on whether the memory device is in power-saving or non-power-saving mode, allowing the system to balance between quick data access and reduced power consumption by adjusting the voltage level appropriately for each operational state.
Data Source
AI summary
A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.