Dynamic Pressure Control for Thin Film Solar Cell Gas Efficiency
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Solution Overview
Problem
Existing methods for forming chalcopyrite-based thin film solar cell materials, such as CIGSS, are inefficient in gas usage during the sulfurization after selenization (SAS) process, leading to waste of process gases.
Innovation Solution
A cost-effective multi-step gas feeding process is implemented, where gas pressure is increased according to the ideal gas law during both selenization and sulfurization processes, minimizing gas introduction and ensuring efficient use by controlling temperature and pressure in the process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If conventional gas feeding process is used during SAS, then solar cell materials can be formed, but process gases are wasted due to inefficient gas usage
Solution Approach 1:
The patent implements dynamic pressure control during the SAS process, adjusting gas pressure in multiple stages rather than maintaining constant pressure. The system increases pressure progressively during sulfurization based on temperature stages, optimizing gas utilization at each phase of the material formation process while preventing gas waste.
Solution Approach 2:
The patent changes physical parameters (temperature and pressure) in a controlled sequence during the SAS process. By coordinating pressure increases with temperature stages, the system optimizes gas reactivity and incorporation into the CIGSS material, thereby improving efficiency and reducing excess gas consumption.
2Productivity
If gas pressure is increased according to ideal gas law during selenization and sulfurization, then gas usage efficiency is improved, but process complexity increases
Solution Approach 1:
The patent incorporates feedback control mechanisms that monitor temperature and pressure conditions in real-time during the SAS process. Based on feedback from temperature sensors and pressure readings, the system automatically adjusts gas flow and pressure according to the ideal gas law relationships, achieving efficient gas utilization without requiring complex manual intervention.
Solution Approach 2:
The patent pre-establishes pressure-temperature profiles before initiating the SAS process. By calculating and setting the sequence of pressure increases based on expected temperature stages, the system simplifies real-time control while maintaining optimal gas usage efficiency throughout the material formation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces gas waste and enhances the efficiency of the solar cell material formation process, making it more economical and effective.
Implementation Method 1
gas pressure is increased according to the ideal gas law during both selenization and sulfurization processes
Data Source
AI summary
A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage of the first pressure value. The temperature in the chamber is increased to a second temperature value for a selenization process so that the pressure in the chamber increases to a third pressure value. Residual gas that is generated during the selenization process can be removed from the chamber. A second inert gas mixture that includes hydrogen sulfide is added into the chamber until the chamber reaches a fourth pressure value. The temperature in the chamber is increased to a third temperature value for a sulfurization process. The chamber is cooled after the sulfurization process.