Dynamic Programming Mode Selection for Memory Storage Error Recovery

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Solution Overview

Problem

Existing data writing methods for rewritable non-volatile memory modules are time-consuming when performing error recovery mechanisms after abnormal power-off, particularly when using multi-page programming modes.

Innovation Solution

A data writing method that dynamically selects between single page and multi-page programming modes based on the availability of physical erasing units, using single page programming when units are scarce to ensure quick error recovery by writing data to available physical programming units and performing valid data merging operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-page programming mode is used to write data to physical erasing units, then storage efficiency is improved, but error recovery time increases significantly

Engineering Contradiction:

Improvestorage efficiencyVSAvoiderror recovery time

Core Design Contradiction:

Quantity of substanceVSLoss of time

Solution Approach 1:

The patent dynamically adjusts the programming mode based on the number of available physical erasing units. When available units are sufficient, multi-page programming mode is used for efficient storage. When available units are insufficient, the system switches to single-page programming mode to enable faster error recovery, thus adapting the programming strategy to current system conditions

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The system changes the programming parameter (programming mode) based on the threshold of available physical erasing units. By setting a threshold value, the system transitions between different programming modes (multi-page vs. single-page) to optimize the balance between storage efficiency and error recovery speed

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If multi-page programming mode is used before power-off, then data density is improved, but data transfer time during error recovery increases

Engineering Contradiction:

Improvedata densityVSAvoiddata transfer time

Core Design Contradiction:

Quantity of substanceVSDuration of action of moving object

Solution Approach 1:

The patent implements dynamic mode selection where the programming mode changes based on real-time availability of physical erasing units. This dynamic adjustment ensures that when error recovery is needed, the system uses single-page programming mode to minimize data transfer time, while maintaining multi-page mode for normal operations to preserve data density

Inventive Principle:

Principle #15Dynamics

3Speed

If single page programming mode is used exclusively, then error recovery speed is improved, but storage efficiency decreases

Engineering Contradiction:

Improveerror recovery speedVSAvoidstorage efficiency

Core Design Contradiction:

SpeedVSProductivity

Solution Approach 1:

Rather than using single-page programming mode exclusively, the patent dynamically selects between single-page and multi-page programming modes based on the number of available physical erasing units. This dynamic approach allows the system to optimize for speed when needed and for storage efficiency when possible, avoiding the drawbacks of exclusive single-page mode usage

Inventive Principle:

Principle #15Dynamics

4Productivity

If the threshold for available physical erasing units is set low, then multi-page programming is used more often improving storage efficiency, but error recovery capability is reduced

Engineering Contradiction:

Improvestorage efficiencyVSAvoiderror recovery capability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The system uses a threshold parameter for the number of available physical erasing units to determine when to switch programming modes. By appropriately setting this threshold, the system balances storage efficiency and error recovery capability, ensuring that single-page programming mode is activated early enough to maintain recovery capability while not being activated too early to preserve storage efficiency

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS11467758B2Data writing method using different programming modes based on the number of available physical erasing units, memory control circuit unit and memory storage device

Publication Date: 2022.10.11 PHISON ELECTRONICS

AI summary

A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first write command from a host system; selecting a first physical erasing unit from at least one physical erasing unit available for writing and writing data corresponding to the first write command to the first physical erasing unit by using a single page programming mode or a multi-page programming mode when the number of physical erasing units available for writing is greater than a first threshold; and selecting a second physical erasing unit from the at least one physical erasing unit available for writing and writing data corresponding to the first write command into the second physical erasing unit by only using the single page programming mode when the number of physical erasing units available for writing is not greater than the first threshold.