Dynamic Pump Unit Configuration for Voltage Stability
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Solution Overview
Problem
Semiconductor memory devices face inefficiencies in power conversion when generating internal voltages from external voltages, leading to reduced power efficiency due to the need for stable voltage operation despite variations in external voltage.
Innovation Solution
A high voltage generator circuit in nonvolatile memory devices that includes a pump unit block, voltage increment control block, and final stage decision block, using a combination of fixed and variable clock signals to determine the number of pump units engaged for voltage generation, ensuring stable high voltage output regardless of external voltage variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor memory device generates internal voltage using external voltage, then stable voltage operation is achieved, but power efficiency is reduced
Solution Approach 1:
The patent applies dynamics by making the pump unit configuration adjustable based on operating conditions. The system dynamically selects between different pump unit configurations (first pump unit with first capacitor, second pump unit with second capacitor, or third pump unit without capacitor) depending on the external voltage level, enabling optimal power efficiency while maintaining stable internal voltage generation across varying external voltage conditions
Solution Approach 2:
The patent changes physical parameters by varying the capacitance values and pump unit configurations based on external voltage levels. When external voltage is high, the system uses configurations with smaller capacitance or fewer pump stages, reducing power consumption. When external voltage is low, the system switches to configurations with larger capacitance or additional pump stages to maintain sufficient voltage boosting capability, thus optimizing power efficiency across different operating conditions
2Reliability
If the number of pump units is increased to generate stable high voltage, then voltage stability is improved, but device complexity increases
Solution Approach 1:
The patent segments the voltage generation function into multiple independent pump units (first pump unit, second pump unit, third pump unit) that can be selectively activated. Each pump unit has its own capacitor configuration, allowing the system to divide the voltage boosting task among different segments based on requirements, maintaining voltage stability without always engaging the full complex configuration
Solution Approach 2:
The patent implements multi-functionality by designing pump units that can serve different purposes depending on configuration. The same basic pump unit structure can function with different capacitor values or be combined in different sequences, allowing a single set of hardware components to perform multiple voltage generation functions, thereby reducing overall device complexity while maintaining voltage stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances power efficiency by generating a stable high voltage within the nonvolatile memory device, independent of external voltage fluctuations, thereby improving the operational stability and efficiency of semiconductor memory devices.
Implementation Method 1
a pump unit block having a plurality of pump units supplied with an external voltage
Data Source
AI summary
A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.