Dynamic Semiconductor Heterojunction Direct-Current Generator
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Solution Overview
Problem
Current nanogenerators have limitations in power generation due to material constraints, structure, and working principles, resulting in low current and power output, and require external rectifier and energy storage circuits, which hinders miniaturization and portability.
Innovation Solution
A direct-current generator based on dynamic semiconductor heterojunction is developed, utilizing contact movement between semiconductor materials with different Fermi levels to generate a high-intensity built-in electric field, allowing direct conversion of mechanical energy into direct-current energy without external rectification, using simple materials and a low-cost structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional nanogenerators are used, then green energy conversion is achieved, but current and power generation are not high enough
Solution Approach 1:
The patent changes the fundamental working principle from triboelectric effect to dynamic semiconductor heterojunction effect, altering the physical parameters of charge generation and transport. This enables current density increase by 2-3 orders of magnitude and power density reaching microwatt to milliwatt level
Solution Approach 2:
The patent uses composite semiconductor heterojunction structures (e.g., Si/GaAs, Si/MoS2) with different Fermi levels to create strong built-in electric fields. The heterojunction combines materials with complementary properties to achieve high current density and stable direct-current output
2Ease of operation
If conventional nanogenerators are used, then alternating-current electrical signal is generated, but external rectifier circuit and energy storage circuit are required
Solution Approach 1:
The dynamic semiconductor heterojunction structure inherently generates direct-current output through asymmetric charge transport under cyclic mechanical stress. The built-in electric field automatically directs charge flow in one polarity, eliminating the need for external rectification and energy storage circuits
Solution Approach 2:
The patent removes the rectifier circuit and energy storage circuit from the system by fundamentally changing the generation mechanism to produce direct-current directly, thereby simplifying the overall device structure and enabling true miniaturization
3Productivity
If conventional nanogenerators are used, then green energy conversion is achieved, but miniaturization is hindered
Solution Approach 1:
By changing to dynamic semiconductor heterojunction mechanism, the patent achieves microwatt to milliwatt power density in miniature devices, enabling practical portable applications without requiring large external circuits
Solution Approach 2:
The patent merges the generation and rectification functions into a single integrated structure, where the heterojunction itself produces direct-current output, eliminating the need for separate external circuits and enabling true miniaturization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The generator achieves a significantly higher current density (2-3 orders of magnitude higher than conventional nanogenerators) and increased generating voltage, enabling real-time power supply to electronic devices without external circuits, suitable for miniature and portable applications.
Implementation Method 1
Lateral movement of heterojunction in a junction region may break the diffusion-drift current balance of a built-in electric field. As a result, diffusion charges bounce directionally under a high-intensity built-in electric field to generate a current
Implementation Method 2
Lateral movement of heterojunction in a junction region may break the diffusion-drift current balance of a built-in electric field
Implementation Method 3
a front surface of the first semiconductor layer and a back surface of the second semiconductor layer contact each other by means of an insulating layer and are slidable relative to each other
Data Source
AI summary
A direct-current generator based on dynamic semiconductor heterojunction and a method for manufacturing the same are provided. Direct-current generator includes a first semiconductor layer (1) and a second semiconductor layer (4); a first electrode (2) is provided on back surface of the first semiconductor layer (1), an insulating layer (3) is provided on front surface of the first semiconductor layer (1); a second electrode (5) is provided on a side of the second semiconductor layer (4); front surface of the first semiconductor layer and a bare side of the second semiconductor layer contact each other and are slidable relative to each other to form a dynamic semiconductor heterojunction direct-current generator; materials of the first semiconductor layer (1) and the second semiconductor layer (4) have different Fermi levels. The generator has high current density, and a generating voltage can increase by designing interface energy band and adding the insulating layer.