Dynamic Soft Program Control for Semiconductor Memory Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The efficiency of the soft program process in semiconductor memory devices is reduced due to temperature-dependent output voltage drops, leading to increased execution time, particularly at low temperatures, and existing solutions like enhancing charge pump capacity or using new algorithms do not guarantee improved efficiency or reduced time.
Innovation Solution
The method involves detecting the total current consumption of memory cells and determining the number of cells to be executed with the soft program process, adjusting the number of bit lines turned on based on current consumption to balance the load of the drain charge pump, thereby optimizing the soft program process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the capacity of the charge pump is enhanced to improve soft program process efficiency, then the soft program process time is reduced, but the active area of the pump circuit is enlarged, causing the memory chip size to increase
Solution Approach 1:
The patent dynamically adjusts the number of memory cells executed with the soft program process based on detected total current consumption. This dynamic adaptation allows the system to optimize soft program efficiency without requiring a larger charge pump circuit, thereby resolving the contradiction between improving productivity and reducing device area.
Solution Approach 2:
The patent changes the operational parameters by adjusting the number of memory cells subjected to soft programming based on current consumption levels. This parameter adjustment enables efficient soft program execution without enhancing charge pump capacity, thus avoiding increased chip area while maintaining high productivity.
2Productivity
If new program algorithms are used to reduce current consumption and improve soft program efficiency, then the efficiency is improved, but the algorithms have to be pre-set and do not guarantee improved efficiency or reduced time
Solution Approach 1:
The patent implements a feedback mechanism by detecting the total current consumption during the soft program process and using this information to dynamically adjust the number of memory cells executed. This real-time feedback approach provides adaptability and guarantees improved efficiency, overcoming the limitations of pre-set algorithms that lack flexibility and performance assurance.
Data Source
AI summary
An erasing method adapted for a semiconductor memory device is provided. The erasing method includes executing a pre-program process on the semiconductor memory device, executing an erase process on the semiconductor memory device, executing an over-erase verification process on a plurality of memory cells of the semiconductor memory device, detecting a total current consumption of the plurality of memory cells, determining the number of the memory cells to be executed with a soft program process according to the total current consumption, and executing the soft program process on the memory cells based on the number of the memory cells.