Dynamic State Chart for Single Crystal Silicon Ingot Monitoring

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Solution Overview

Problem

Continuous Czochralski processes for growing single crystal silicon ingots are challenging to control due to sensitivity to changes in growth parameters, leading to instability and dislocations, necessitating improved monitoring and control systems for operators.

Innovation Solution

A dynamic state chart system that includes a visual representation of multiple ingot growth parameters, integrated with a control unit and sensors, allowing for real-time monitoring and control of parameters such as temperature, diameter, and polysilicon feed rate, providing a comprehensive and accessible overview for operators.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If continuous Czochralski process is used to grow single crystal silicon ingots, then productivity is improved through continuous operation, but the system becomes highly sensitive to parameter changes causing instability and control difficulties

Engineering Contradiction:

Improvecontinuous ingot productionVSAvoidprocess stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The system continuously monitors multiple growth parameters (temperature, diameter, pull rate, feed rate) and provides real-time feedback to operators through the dynamic state chart, enabling timely adjustments to maintain stability during continuous operation

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The state chart dynamically adapts its display and alerts based on real-time parameter changes, allowing the system to respond flexibly to varying conditions while maintaining continuous production

Inventive Principle:

Principle #15Dynamics

2Manufacturing precision

If multiple growth parameters are monitored to ensure successful ingot growth, then manufacturing precision is improved, but the complexity of the monitoring and control system increases

Engineering Contradiction:

Improveingot growth controlVSAvoidmonitoring system complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Multiple parameter monitors are merged into a single integrated dynamic state chart display, consolidating temperature, diameter, pull rate, and feed rate information into one cohesive interface that reduces operational complexity while maintaining comprehensive monitoring

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The state chart serves multiple functions simultaneously: it displays current parameter values, indicates target values, provides visual feedback on system state, and alerts operators to deviations, replacing multiple separate monitoring functions with a single multi-functional interface

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If real-time monitoring of multiple parameters is implemented, then reliability of ingot growth is improved, but the ease of operation decreases due to information overload

Engineering Contradiction:

Improvegrowth parameter controlVSAvoidoperator interface simplicity

Core Design Contradiction:

ReliabilityVSEase of operation

Solution Approach 1:

The state chart segments information by dividing the display into distinct regions for different parameters (temperature, diameter, pull rate, feed rate), with each parameter shown in a dedicated section, making it easier for operators to locate and interpret specific information without being overwhelmed by a cluttered interface

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The system uses color-coded indicators to represent different system states and parameter deviations, allowing operators to quickly assess the current state and identify issues at a glance without needing to interpret complex numerical data, thereby improving ease of operation while maintaining reliable monitoring

Inventive Principle:

Principle #32Color changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables quicker adjustments and improved control of ingot growth parameters, reducing the risk of instability and dislocations, and providing a simplified visual interface for operators to manage complex growth processes.

Implementation Method 1

A melt of silicon is prepared in a crucible

Methodology Applied

Scientific EffectMelting: Melting

Implementation Method 2

A single crystal silicon ingot is withdrawn from the melt

Methodology Applied

Scientific EffectCrystallisation: Crystallisation

Data Source

PatentUS11795571B2Production and use of dynamic state charts when growing a single crystal silicon ingot

Publication Date: 2023.10.24 GLOBALWAFERS CO LTD

AI summary

Methods for growing a single crystal silicon ingot are disclosed. A dynamic state chart that monitors a plurality of ingot growth parameters may be produced and used during production of single crystal silicon ingots. In some embodiments, the dynamic state chart is a dynamic circle map chart having a plurality of sectors with each sector monitoring an ingot growth parameter.