Dynamic Substrate Support for CVD Film Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor deposition processes face challenges in achieving uniform layer thickness due to fixed substrate support positions, leading to deposition non-uniformities despite restricted substrate movement during the process.
Innovation Solution
Implementing dynamic, real-time control of process spacing between the substrate support and gas distribution medium, allowing for multi-dimensional adjustments such as leveling, tilting, and moving the substrate support to optimize film uniformity by continuously varying the substrate plane relative to the gas distribution medium.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate support position is fixed during deposition, then the substrate position is stable, but deposition non-uniformities occur due to inability to adjust process spacing
Solution Approach 1:
The substrate support system transitions from a fixed position to a dynamic, adjustable position during deposition. The gas distribution medium is made movable relative to the substrate support, allowing real-time adjustment of process spacing to optimize film thickness uniformity across different deposition conditions.
Solution Approach 2:
The system changes the process spacing parameter dynamically during deposition by moving the gas distribution medium. This allows optimization of deposition uniformity by adjusting the distance between the gas distribution medium and substrate support based on measured thickness variations and process conditions.
2Manufacturing precision
If the substrate support is restricted from moving during deposition, then positioning stability is maintained, but deposition non-uniformities persist due to fixed process spacing
Solution Approach 1:
The gas distribution medium is designed with dynamic positioning capability, allowing it to move relative to the substrate support during deposition. This enables real-time adjustment of process spacing to achieve uniform layer thickness without compromising substrate support stability.
Solution Approach 2:
The system incorporates feedback mechanisms to monitor deposition uniformity and adjust the gas distribution medium position accordingly. This closed-loop control allows the system to respond to thickness variations and maintain optimal process spacing throughout the deposition process.
3Manufacturing precision
If multi-dimensional adjustments are implemented during deposition, then film uniformity is improved, but system complexity increases
Solution Approach 1:
The adjustment system is divided into separate functional components: the substrate support remains relatively simple and stable, while the gas distribution medium incorporates the dynamic positioning mechanisms. This segmentation allows multi-dimensional adjustments without significantly complicating the substrate support structure.
Solution Approach 2:
The gas distribution medium is designed to perform multiple functions: gas distribution and dynamic positioning. By integrating positioning capabilities into the gas distribution medium, the system achieves multi-dimensional adjustment functionality without requiring separate complex adjustment mechanisms for the substrate support.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved film uniformity and independent tuning of each layer, enhancing overall stack deposition performance by dynamically adjusting the substrate support during the deposition process, thereby reducing thickness differences across the substrate.
Implementation Method 1
The substrate rests above the heater surface of the heater and heat is supplied to the bottom of the substrate. Some substrate heaters are resistively heated, for example, by electrical heating such as resistive coils disposed below the heater surface or embedded in a plate on or in the heater surface.
Implementation Method 2
The gas distribution medium is often part of a gas distribution assembly for supplying one or more gases to the chamber. The gas flow from the gas distribution medium to the substrate affects the uniformity of the layer formed on the substrate.
Implementation Method 3
Conventional thermal CVD processes supply reactive gases to the substrate surface where heat-induced chemical reactions can take place
Implementation Method 4
Plasma enhanced CVD processes promote the excitation and/or dissociation of the reactant gases by the application of energy, such as radio frequency (RF) energy, to the reaction zone proximate the substrate surface thus creating a plasma of highly reactive species.
Implementation Method 5
Plasma enhanced CVD processes promote the excitation and/or dissociation of the reactant gases by the application of energy, such as radio frequency (RF) energy
Implementation Method 6
The substrate support typically supports the substrate opposite the gas distribution medium through which a reactant gas is supplied to the chamber. The positioning and/or movement of the substrate support is typically performed to adjust the position of the substrate in preparation for processing.
Data Source
AI summary
The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.