Dynamic Supply Voltage Circuit for SRAM Write Speed
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Solution Overview
Problem
Existing SRAM memory devices face limitations in write data operation speed due to high power consumption and inflexibility in supply voltage management, which affects performance and efficiency.
Innovation Solution
A pulsed dynamic LCV circuit dynamically adjusts the supply voltage and charging back timing to provide a reduced supply voltage during write operations, optimizing voltage levels and timing for faster write cycles while maintaining signal integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If SRAM operates at higher speed, then write data operation speed is improved, but power consumption increases
Solution Approach 1:
The patent applies dynamics by making the supply voltage adjustable rather than fixed. The voltage adjustment circuit dynamically changes the supply voltage to different levels (first supply voltage and second supply voltage) based on operational requirements, enabling the SRAM to operate at higher speeds when needed while reducing power consumption during normal operations.
Solution Approach 2:
The patent changes the voltage parameter by introducing a voltage adjustment circuit that can switch between multiple voltage levels. This parameter change allows the SRAM cell to achieve faster write operations at higher voltages while maintaining lower power consumption during standard operations, directly addressing the speed-power consumption tradeoff.
2Stability of the object's composition
If SRAM uses more transistors to maintain bi-stable state, then memory stability is improved, but device integration density decreases
Solution Approach 1:
The patent changes the voltage parameter to optimize the balance between stability and complexity. By adjusting the supply voltage dynamically, the system can maintain stable bi-stable operation with fewer transistors while still achieving reliable memory storage, thereby reducing device complexity without sacrificing stability.
3Use of energy by moving object
If SRAM standby current is reduced, then power consumption is improved, but write operation speed may be affected
Solution Approach 1:
The patent applies dynamics by switching between different supply voltage levels. During write operations, the circuit uses a higher second supply voltage to achieve fast write speeds, while during standby or normal operations, it uses a lower first supply voltage to minimize power consumption and standby current, thus resolving the tradeoff between power efficiency and write speed.
Solution Approach 2:
The patent changes the voltage parameter dynamically based on operational mode. The voltage adjustment circuit switches between first and second supply voltages, allowing the SRAM to achieve low power consumption during standby while maintaining high write operation speed when needed, directly addressing the power-speed tradeoff.
Data Source
AI summary
A circuit includes a supply voltage circuit, a voltage adjustment circuit, and a timing adjustment circuit. The supply voltage circuit is coupled to a memory device configured to provide a voltage level to the memory device during a write data operation. The voltage adjustment circuit is coupled to the supply voltage circuit, and is configured to provide at least one voltage level control signal to control one of a plurality of different voltages. At least one of the plurality of different voltages has a voltage level lower than a specified nominal supply voltage level. The timing adjustment circuit is coupled to the supply voltage circuit, and is configured to provide at least one voltage transition timing control signal to the supply voltage circuit. The supply voltage circuit is configured to provide at least one of the plurality of different voltages to the memory device during the write data operation.