Dynamic Table Group Selection for Memory Read Voltage
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Solution Overview
Problem
The existing memory management techniques for rewritable non-volatile memory modules face decreased data decoding efficiency when the operating environment changes, as they rely on preset management tables that are not adaptable to varying statuses.
Innovation Solution
A table management method that dynamically determines a target table group based on the memory storage device's status, using multiple voltage management tables to adjust read voltage levels and improve decoding efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If preset management tables are used to determine read voltage levels, then the reading process is simple and fast, but data decoding efficiency decreases when operating environment changes
Solution Approach 1:
The patent implements dynamic table group selection based on device status. The memory control circuit determines which table group to use (first, second, or third) according to the current operating conditions such as temperature, wear level, or error rates. This dynamic adaptation allows the system to maintain high decoding efficiency across varying environments rather than relying on a fixed preset table.
Solution Approach 2:
The patent changes the parameter of table group selection based on operating status. By monitoring device parameters (temperature, wear, error rates) and adjusting the selected table group accordingly, the system optimizes read voltage level selection for each specific operating condition, thereby maintaining high decoding efficiency despite environmental changes.
2Reliability
If multiple voltage management tables are stored and queried sequentially, then data can be read with high accuracy under varying conditions, but the reading process becomes more complex and time-consuming
Solution Approach 1:
The patent performs preliminary classification of device status into different categories (first status, second status, third status) and pre-assigns corresponding table groups to each status. When reading data, the system only needs to determine which status the device is currently in and select the pre-assigned table group, rather than sequentially querying multiple tables. This preliminary organization significantly simplifies the query process while maintaining high reading accuracy.
Solution Approach 2:
The patent segments the voltage management tables into different table groups (first table group, second table group, third table group), each optimized for specific device status ranges. This segmentation allows the system to focus the query process on only the relevant table group for the current operating conditions, reducing the complexity of searching through all available tables while ensuring accurate data reading.
3Productivity
If the read voltage level is adjusted frequently to accommodate changing device status, then data decoding efficiency is maintained, but energy consumption increases
Solution Approach 1:
The patent implements a feedback mechanism where the memory control circuit continuously monitors device status parameters (temperature, wear level, error rates) and uses this feedback to determine the appropriate table group for reading operations. By basing voltage level adjustments on actual device feedback rather than fixed schedules or frequent changes, the system maintains decoding efficiency while minimizing unnecessary energy consumption associated with frequent voltage adjustments.
Data Source
AI summary
A table management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: storing multiple table groups, wherein each of the table groups includes multiple voltage management tables; detecting a status of the memory storage device; determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group includes multiple target voltage management tables; reading data from a rewritable non-volatile memory module by using at least one read voltage level according to at least one of the target voltage management tables.