Dynamic TEB Adjustment for Non-Volatile Memory ECC Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional non-volatile memory devices face limitations in error correction, as existing algorithms like SEC-DED can only correct single faulty bits, and fixed tolerated error bit (TEB) thresholds lead to unnecessary consumption of ECC capability when writing data with fewer error bits, potentially causing data corruption and system crashes.
Innovation Solution
A method and device that dynamically adjust the TEB number during programming operations, initially setting it to a low value and incrementally increasing it based on pulse counts, ensuring that verification operations are controlled within the ECC threshold, thereby preventing ECC capability consumption and enhancing data reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a fixed TEB threshold is used for verification operations, then the error correction capability is simplified to manage, but the ECC capability is unnecessarily consumed when writing data with fewer error bits, potentially causing data corruption
Solution Approach 1:
The patent applies dynamics by making the TEB threshold variable rather than fixed. The control logic dynamically adjusts the TEB threshold based on the actual number of error bits detected during verification operations. When fewer error bits are detected, the TEB threshold is reduced accordingly, preventing unnecessary ECC capability consumption while maintaining data reliability.
Solution Approach 2:
The patent changes the parameter of TEB threshold from a constant value to a variable parameter that adapts to different programming conditions. The control logic modifies the TEB threshold parameter based on the pulse count and verification results, allowing the system to optimize ECC usage according to actual error conditions without compromising data integrity.
2Reliability
If the TEB number is set to a high value to accommodate more error bits, then the error correction capability is enhanced, but the verification operations become less efficient and ECC capability is consumed unnecessarily
Solution Approach 1:
The system dynamically adjusts the TEB threshold based on actual verification needs rather than using a consistently high value. The control logic monitors verification results and pulse counts, then adjusts the TEB parameter accordingly, maintaining high error correction capability when needed while improving verification efficiency when fewer errors are detected.
Solution Approach 2:
The patent implements parameter changes by modifying the TEB threshold value based on the programming state and verification results. The control logic increases the TEB threshold when more error correction is needed and reduces it when fewer errors are detected, optimizing both reliability and productivity across different operating conditions.
3Productivity
If verification operations are performed with a low TEB threshold, then unnecessary programming iterations are reduced, but data with fewer error bits may be incorrectly rejected
Solution Approach 1:
The system dynamically adjusts the TEB threshold during the programming process based on verification results. When initial verification shows fewer error bits, the TEB threshold is reduced to avoid unnecessary re-programming iterations, improving productivity. However, the system maintains the ability to increase the threshold if subsequent verifications indicate more errors, ensuring data accuracy.
Solution Approach 2:
The patent implements feedback mechanisms where the control logic continuously monitors verification results and adjusts the TEB threshold accordingly. The feedback from verification operations allows the system to learn from actual error conditions and adapt the TEB parameter, balancing programming speed with data accuracy through iterative refinement.
4Reliability
If the TEB threshold is increased to prevent data corruption, then data reliability is improved, but the ECC capability is exhausted faster
Solution Approach 1:
The patent applies parameter changes by dynamically modifying the TEB threshold based on actual error conditions. Rather than consistently using a high threshold that exhausts ECC capability, the system adjusts the threshold to match the actual number of error bits detected, preserving ECC capability for when it is truly needed while maintaining data integrity.
Solution Approach 2:
The system makes the TEB threshold dynamic rather than static, allowing it to adapt to different programming scenarios. This dynamic adjustment prevents premature exhaustion of ECC capability while maintaining high data integrity standards, as the threshold is raised only when verification operations detect a higher number of error bits that require ECC correction.
Data Source
AI summary
A method of controlling verification operations for error correction of a non-volatile memory device includes the following. A tolerated error bit (TEB) number for error correction of the non-volatile memory device is set to a first value to control verification operations in accordance with the TEB number. After at least one portion of the non-volatile memory device is programmed for a specific number of times, the TEB number is changed from the first value to a second value to control the verification operations in accordance with the TEB number, wherein the second value is greater than the first value and is less than or equal to the TEB threshold. The method may be performed while the at least one portion of the non-volatile memory device is programmed and verified.