Dynamic Transistor Sizing for Feedthrough Noise Reduction

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Solution Overview

Problem

Feedthrough noise in transistor switches affects signal accuracy and display quality due to unequal parasitic capacitors in P-type and N-type transistors, leading to charge injection and discharge issues when the switch is turned off, especially at varying input voltages.

Innovation Solution

A circuit device with a transfer gate comprising P-type and N-type transistors in parallel, where the control circuit dynamically adjusts the transistor size ratio based on the input signal voltage range to balance parasitic capacitors, reducing feedthrough noise by setting the ratio differently for high and low voltage ranges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If equal transistor size is used for P-type and N-type transistors in a transfer gate, then the structure is simple and manufacturing is easy, but feedthrough noise cannot be effectively reduced because parasitic capacitors fluctuate unequally with voltage changes

Engineering Contradiction:
Improvetransistor size configurationVSAvoidfeedthrough noise
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The patent applies dynamics by making the transistor size ratio adjustable based on input voltage conditions. The control circuit dynamically selects between first and second transistor size ratios depending on whether the input voltage is in a first or second voltage range, allowing the system to adapt to varying voltage conditions and optimize feedthrough noise reduction accordingly

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the transistor size ratio parameter based on input voltage ranges. When input voltage is in the first voltage range, a first transistor size ratio is used; when in the second voltage range, a second transistor size ratio is used. This parameter change allows the parasitic capacitors to be balanced differently for different voltage conditions, effectively reducing feedthrough noise

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If fixed transistor size ratio is used in the transfer gate, then the circuit structure is simple, but signal accuracy deteriorates due to voltage-dependent feedthrough noise variations

Engineering Contradiction:
Improvecontrol circuit structureVSAvoidsignal accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The control circuit dynamically adjusts the transistor size ratio based on the input signal voltage range. By detecting whether the input voltage falls in the first or second voltage range and accordingly selecting the appropriate transistor size ratio, the system maintains high signal accuracy across different voltage conditions without requiring overly complex circuit structures

Inventive Principle:
Principle #15Dynamics

3Reliability

If equal parasitic capacitors are assumed for P-type and N-type transistors, then charge injection and discharge can be balanced, but this assumption fails when input voltage varies because parasitic capacitors fluctuate differently with voltage

Engineering Contradiction:
Improvecharge balanceVSAvoidvoltage range adaptation
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the transistor size ratio parameter according to different voltage ranges. When input voltage is in the first voltage range, the first transistor size ratio balances the parasitic capacitors; when in the second voltage range, the second transistor size ratio balances them differently. This ensures charge injection and discharge remain balanced across varying voltage conditions

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies different transistor size ratios for different voltage ranges, making the system's characteristics locally optimized for each operating condition. The first transistor size ratio is optimized for the first voltage range, while the second transistor size ratio is optimized for the second voltage range, ensuring reliable charge balance in each local operating region

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11263944B2Circuit device, electro-optical device, and electronic apparatus
Publication Date: 2022.03.01 SEIKO EPSON CORP
  • US11263944B2 patent drawing
  • US11263944B2 patent drawing
  • US11263944B2 patent drawing

AI summary

A circuit device includes a transfer gate and a control circuit. The transfer gate includes a P-type transistor and an N-type transistor. The control circuit sets, as a first value, a transistor size ratio that is a ratio of a size of the P-type transistor to a size of the N-type transistor when a voltage of an input signal to the transfer gate is in a first voltage range at a timing at which the transfer gate is turned off. The control circuit sets the transistor size ratio as a second value greater than the first value when a voltage of the input signal is in a second voltage range lower than that in the first voltage range at a timing at which the transfer gate is turned off.