Dynamic Word Line Configuration for 3D Memory Reliability
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Solution Overview
Problem
Three-dimensional memory devices face challenges in maintaining data reliability due to variations in hole shape during manufacturing, leading to inconsistent performance of memory cells and increased bit errors, which existing technologies struggle to address effectively.
Innovation Solution
A memory controller dynamically adjusts configuration parameters such as ECC encoding strength and programming parameters for each word line based on status metrics like program-erase cycles, bytes written, and bit error rate, allowing for adaptive optimization of storage device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-level cell storage is used to increase data storage density, then storage capacity is improved, but bit error rate increases
Solution Approach 1:
The patent applies local quality by detecting status metrics (such as read errors, write errors, or retention failures) for individual word lines and adjusting configuration parameters specifically for affected word lines rather than the entire memory device. This allows targeted correction of errors in specific regions while maintaining optimal performance in unaffected regions.
Solution Approach 2:
The patent implements dynamics by dynamically adjusting configuration parameters (such as ECC encoding strength, programming parameters, or storage density) based on detected status metrics. The system transitions from static factory default settings to adaptive, runtime-adjusted parameters that respond to actual device performance conditions.
2Reliability
If error correcting code is used to correct bit errors, then data reliability is improved, but data storage capacity decreases
Solution Approach 1:
The system applies ECC coding selectively to word lines that exhibit poor status metrics, rather than uniformly applying strong ECC to all word lines. This allows the system to maintain high data reliability where needed while preserving maximum storage capacity in word lines that perform well.
Solution Approach 2:
The patent changes the ECC encoding strength parameter dynamically based on detected status metrics. When a word line shows degradation, the system increases ECC strength for that specific word line, thereby adapting the error correction overhead to actual reliability needs rather than using a fixed high overhead approach.
3Manufacturing precision
If hole shape consistency is maintained through multiple layers, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent performs preliminary actions by detecting status metrics during initial operation or characterization to identify word lines with poor performance before normal data storage begins. This allows the system to adjust configuration parameters proactively rather than reactively, avoiding the need for complex real-time adjustments during data operations.
Data Source
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Figure 2B~2C
AI summary
A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.