Dynamic XOR Parity Mapping in Flash Memory

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Solution Overview

Problem

Existing flash memory devices face issues with error correction overhead due to static XOR parity placement, which can lead to increased dependency on error-prone memory dies and wasted space in memory systems.

Innovation Solution

Implementing a dynamic reconfiguration of parity memory cells, where the memory controller relocates or duplicates parity cells based on performance data to avoid error-prone areas, thereby reducing dependency on defective dies and optimizing parity distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If static XOR parity placement is used in flash memory devices, then error correction can be performed, but computational overhead increases and dependency on error-prone memory dies increases

Engineering Contradiction:
Improveerror protectionVSAvoidcomputational overhead
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic reconfiguration of parity memory cells, where the memory controller monitors performance data and relocates or duplicates parity cells based on real-time memory die health status. This transforms the static parity placement into a dynamic system that adapts to changing memory conditions, reducing dependency on error-prone dies while maintaining error correction capability

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system continuously monitors performance data from memory dies and uses this feedback to make informed decisions about parity cell placement. The memory controller adjusts parity configuration based on observed error patterns and die reliability, creating a closed-loop system that optimizes error protection while minimizing computational overhead

Inventive Principle:
Principle #23Feedback

2Reliability

If static XOR parity placement is used in flash memory devices, then error correction can be performed, but memory space is wasted

Engineering Contradiction:
Improveerror protectionVSAvoidmemory space utilization
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent changes the configuration parameters of parity memory cells dynamically based on memory die performance. By adjusting the number and location of parity cells according to observed error rates and die health, the system optimizes the balance between error protection and memory space utilization, avoiding waste of memory resources on overly conservative static allocation

Inventive Principle:
Principle #35Parameter changes

3Reliability

If parity data is relocated away from error-prone components, then error protection is enhanced, but system complexity increases

Engineering Contradiction:
Improveerror protectionVSAvoidreconfiguration complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements parity cell duplication as a strategy to protect against errors in relocated parity cells. By creating redundant copies of parity data in multiple locations, the system enhances error protection while managing reconfiguration complexity through standardized copy operations that can be automated by the memory controller

Inventive Principle:
Principle #26Copying

Data Source

PatentUS11822814B2Dynamic XOR bin mapping in memory devices
Publication Date: 2023.11.21 SANDISK TECHNOLOGIES LLC
  • US11822814B2 patent drawing
  • US11822814B2 patent drawing
  • US11822814B2 patent drawing

AI summary

A storage device includes multiple memory dies and a controller configured to: (i) perform XOR parity computations for parity bins based, at least in part, on updated contents of a first user data memory cell and contents of each user data memory cell also assigned to the first parity bin, (ii) storing the first parity data into a first parity memory cell associated with the first parity bin; (iii) identify a second parity memory cell for dynamic reconfiguration based, at least in part, on performance data of the non-volatile memory device, the second parity memory cell being assigned to a second parity bin; (iv) copy the second parity memory cell to a third memory cell of the plurality of memory cells; and (v) associate the third memory cell with the second parity bin, thereby making the third memory cell a parity memory cell of the plurality of parity memory cells.