E-Beam Mask Writer Data Correction
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Solution Overview
Problem
The existing mask manufacturing processes are inefficient due to lengthy data format conversion and mask process correction stages, which delay the exposure process and hinder productivity in semiconductor device production.
Innovation Solution
An exposure method using an e-beam that minimizes mask data preparation time by performing complex corrections, including proximity effect correction and mask process correction, directly on the exposure equipment, without data format conversion, and utilizing contrast enhancement by dose modulation technology to optimize the e-beam writing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If data format conversion and mask process correction are performed in traditional mask manufacturing processes, then manufacturing precision is maintained, but exposure process time increases significantly
Solution Approach 1:
The patent applies preliminary action by performing optical proximity correction (OPC) and mask process correction (MPC) before the exposure process. The mask data is pre-corrected with proximity effect correction and process correction values, so that when the e-beam exposure occurs, the corrections are already embedded in the data, eliminating the need for time-consuming real-time corrections during exposure.
Solution Approach 2:
The patent uses copying by creating a corrected mask data file that contains pre-calculated correction values. Instead of performing complex corrections during the exposure process, the system creates a copy of the mask data with corrections already applied, which is then used for the actual exposure, significantly reducing exposure time while maintaining precision.
2Measurement precision
If traditional mask data preparation processes are used, then data accuracy is maintained, but productivity decreases due to lengthy processing stages
Solution Approach 1:
The patent performs all necessary data corrections (OPC and MPC) in advance during mask data preparation, so that the exposure equipment receives already-corrected data. This preliminary correction approach maintains data accuracy while eliminating lengthy processing stages during the exposure process, thereby improving productivity.
Solution Approach 2:
The patent merges multiple correction functions (optical proximity correction and mask process correction) into a single integrated correction process that occurs once during data preparation. This consolidation reduces the number of separate processing stages and improves throughput while maintaining the accuracy benefits of multiple correction types.
3Loss of time
If complex corrections are performed without data format conversion, then exposure time is reduced, but correction accuracy may be compromised
Solution Approach 1:
The patent performs all complex corrections (OPC and MPC) during the mask data preparation phase before exposure. By completing these corrections in advance, the system ensures that the exposure process receives ready-to-use corrected data, maintaining correction accuracy while significantly reducing exposure time since no complex corrections are needed during the actual exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required for the exposure process, enhances pattern quality, and improves productivity by integrating complex corrections and dose modulation techniques within the e-beam writing process, thereby addressing the inefficiencies in traditional mask manufacturing methods.
Implementation Method 1
The e-beam writing unit (250) performs e-beam writing on a mask substrate, based on the pixel data
Data Source
AI summary
Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.


