e-Fuse Layout With Heating Transistors for Lower Programming Current
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Solution Overview
Problem
Integrated circuits require high programming currents for electrically programmable fuses (e-fuses), which necessitate larger transistors, consuming valuable space and being undesirable.
Innovation Solution
Incorporating Fin-type bipolar-junction-transistors (Fin-BJTs) or Fin-type field-effect-transistors (Fin-FETs) adjacent to the e-fuse, where a current flowing through these transistors increases the temperature of the e-fuse, reducing the required programming current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high programming current is applied to the e-fuse, then the e-fuse can be programmed (blown), but a larger programming transistor is required, consuming valuable space on the integrated circuit
Solution Approach 1:
The patent applies preliminary heating to the e-fuse before applying the programming current. By pre-heating the e-fuse using a heating transistor, the fuse material reaches a temperature where its resistance is reduced and it becomes more susceptible to being blown. This preliminary thermal action reduces the magnitude of the programming current needed, thereby allowing a smaller programming transistor to be used while still achieving reliable e-fuse programming.
Solution Approach 2:
The patent changes the temperature parameter of the e-fuse by introducing a heating transistor that raises the fuse temperature before programming. This parameter change (temperature increase) modifies the electrical properties of the e-fuse material, reducing its resistance and lowering the programming current requirement. The heating transistor temporarily alters the thermal state of the system to enable more efficient programming with reduced current demand.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces the programming current needed to 'blow' the e-fuse, thereby minimizing transistor size and preserving space on the integrated circuit.
Implementation Method 1
a current flowing through the Fin-BJT increases a temperature of the e-fuse
Data Source
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AI summary
A structure includes: an electrically programmable fuse (e-fuse) including an anode and a cathode; at least one transistor positioned adjacent the e-fuse; and an electrically conductive interconnect coupling the cathode of the e-fuse to the at least one transistor, wherein the at least one transistor includes at least one semiconductor fin extending perpendicularly to the e-fuse.