E-Fuse Structure With Segmented Fuse Element

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional e-Fuse structures in semiconductor devices face challenges in reducing voltage requirements and minimizing hillock formation due to high current density and electromigration, especially as integrated circuit dimensions shrink, leading to inefficiencies in programming and increased power consumption.

Innovation Solution

The development of an advanced e-Fuse structure with a fuse element having a smaller cross-section and higher aspect ratio than the anode and cathode regions, utilizing high EM-resistant conductive materials for the anode and cathode regions and low EM-resistant materials for the fuse element, along with microstructure control to enhance electromigration resistance differences through varying trench aspect ratios and grain structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional e-Fuse structures are used with uniform cross-section, then manufacturing is simpler, but voltage required for programming is too high and hillock formation occurs

Engineering Contradiction:

Improvevoltage required for programmingVSAvoidfuse structure complexity

Core Design Contradiction:

Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The fuse structure is segmented into three distinct regions: anode region, cathode region, and a narrow fuse element region in between. This segmentation allows each region to have optimized dimensions - the fuse element has a smaller cross-sectional area than the anode and cathode regions, creating current density localization that reduces programming voltage requirements while preventing hillock formation in the contact regions

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the fuse structure are given different local properties - the fuse element region has a smaller cross-section to concentrate current and reduce voltage, while the anode and cathode regions have larger cross-sections with high EM-resistant materials to prevent hillock formation. This local quality differentiation resolves the contradiction between reducing programming voltage and preventing structural defects

Inventive Principle:

Principle #3Local quality

2Productivity

If high current density is used to program the fuse, then programming speed increases, but hillock formation and electromigration increase

Engineering Contradiction:

Improveprogramming speedVSAvoidhillock formation

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The harmful effect of high current density is extracted and localized only to the fuse element region, while the anode and cathode regions are designed with larger cross-sections and high EM-resistant materials to eliminate hillock formation. This separates the function of current concentration (needed for fast programming) from the function of structural stability (preventing hillocks)

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The harmful electromigration effect is converted into a beneficial localized effect - by designing the fuse element with smaller cross-section and appropriate material, the current density concentration that would normally cause hillock formation is instead used to efficiently break the fuse link at the intended location, while the contact regions are protected from this effect

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves programming efficiency by reducing the voltage needed for programming and minimizing hillock formation, thereby enhancing the electromigration resistance and overall performance of e-Fuse structures in semiconductor devices.

Implementation Method 1

The fuse element is comprised of low EM-resistant conductive material

Methodology Applied

Scientific EffectElectromigration:

Data Source

PatentUS10008446B2Advanced E-fuse structure with enhanced electromigration fuse element

Publication Date: 2018.06.26 INTERNATIONAL BUSINESS MACHINE CORPORATION

AI summary

A structure for an e-Fuse device in a semiconductor device is described. The e-Fuse device includes an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The anode and cathode regions are comprised of a high EM-resistant conductive material. The fuse element is comprised of low EM-resistant conductive material.