E-beam Mask Patterning via Localized Dose Control
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Solution Overview
Problem
Current patterning methods using electron beams face challenges in achieving high pattern resolution and fidelity, particularly in reducing size and maintaining process fidelity during the lithography process for semiconductor devices and photo masks.
Innovation Solution
A method and system that utilize a multi-beam exposure technology to irradiate electron beams with varying doses to specific regions of a mask layer, including edge, central, and corner portions, to form high-resolution patterns, with the exposure regions being spaced or connected by non-exposure regions, allowing for precise control of beam dosage levels within a single solid pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If electron beam exposure is used for copying layout data onto mask layer, then productivity is improved, but pattern resolution and process fidelity deteriorate when reducing pattern size
Solution Approach 1:
The patent applies local quality by dividing the exposure region into multiple zones (first region, second region, third region) with different E-beam dose levels. The first region receives a first dose, the second region receives a second dose, and the third region receives a third dose, allowing each local area to be optimized for its specific pattern formation requirements, thereby achieving high resolution while maintaining productivity
Solution Approach 2:
The patent changes the E-beam exposure parameter (dose) across different regions to resolve the contradiction. By varying the dose levels (first dose, second dose, third dose) in different spatial regions, the system achieves precise control over pattern formation, enabling high resolution patterning while maintaining efficient electron beam exposure processes
2Productivity
If electron beam exposure is used for copying layout data onto mask layer, then productivity is improved, but process fidelity deteriorates when reducing pattern size
Solution Approach 1:
The patent applies local quality by implementing region-specific E-beam dosing strategies. The first region, second region, and third region each receive tailored dose levels to ensure faithful reproduction of the layout data, maintaining process fidelity while benefiting from the high productivity of electron beam exposure
Solution Approach 2:
The patent employs feedback mechanisms through the developing process that uses the differently dosed mask layer to form accurate mask patterns. The multi-dose exposure creates distinct regions that guide the developing process to produce faithful replicas of the intended layout, ensuring process fidelity is maintained
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of patterns with high resolution and fidelity, overcoming issues of pattern resolution and process fidelity, and is applicable in semiconductor manufacturing and photomask fabrication.
Implementation Method 1
performing an E-beam exposure process to a mask layer, based on the exposure layout
Implementation Method 2
performing a developing process to the mask layer to form mask patterns
Data Source
AI summary
A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.