Electron Beam Pattern Data Rotation for Boundary Alignment

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Solution Overview

Problem

The electron beam writing process faces challenges in forming precise patterns, particularly with non-smooth boundaries, as the hypotenuse of shapes like right triangles is difficult to create using rectangle beam shots, requiring complex data alignment and reducing process efficiency.

Innovation Solution

The method involves rotating a calculated pattern to align its non-smooth boundary with the beam shots, allowing for the determination of a second set of beam shots to revise the boundary, thereby simplifying the pattern revision process and improving efficiency by reducing the need for individual point corrections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If rectangle beam shots are used to form a right triangle pattern, then the pattern can be formed by aligning beam shots, but the hypotenuse becomes stepped and non-smooth, requiring complex data alignment and reducing process efficiency

Engineering Contradiction:
Improvepattern boundary smoothnessVSAvoiddata alignment complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by rotating the pattern data so that the hypotenuse boundary becomes parallel to the beam shot grid. This transforms the asymmetric stepped hypotenuse into a symmetric alignment with the rectangular beam shots, eliminating the need for complex individual point corrections and simplifying the data structure while maintaining pattern accuracy

Inventive Principle:
Principle #4Asymmetry

2Manufacturing precision

If rectangle beam shots are used to form a right triangle pattern, then the pattern can be formed by aligning beam shots, but the process efficiency is reduced due to large data requirements

Engineering Contradiction:
Improvepattern formation accuracyVSAvoidprocess efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent changes the parameter of pattern orientation by rotating the pattern data. This parameter change transforms the data structure from requiring individual point corrections to a simplified form where the hypotenuse aligns with the beam shot grid, reducing data complexity and improving processing efficiency while maintaining formation accuracy

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the pattern revision process by aligning the boundary of the desired pattern with the beam shots, reducing data complexity and improving the accuracy of pattern formation on semiconductor wafers or masks.

Implementation Method 1

An electron beam (E-beam) writing process is a process to transform a medium using an electron beam. In particular, some electron beam writing processes use electron beams to write a design (pattern) in a medium.

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Data Source

PatentUS10861673B2Method of pattern data preparation and method of forming pattern in layer
Publication Date: 2020.12.08 UNITED MICROELECTRONICS CORP
  • US10861673B2 patent drawing
  • US10861673B2 patent drawing
  • US10861673B2 patent drawing

AI summary

A method of pattern data preparation includes the following steps. A desired pattern to be formed on a surface of a layer is inputted. A first set of beam shots are determined, and a first calculated pattern on the surface is calculated from the first set of beam shots. The first calculated pattern is rotated, so that a boundary of the desired pattern corresponding to a non-smooth boundary of the first calculated pattern is parallel to a boundary constituted by beam shots. A second set of beam shots are determined to revise the non-smooth boundary of the first calculated pattern, thereby calculating a second calculated pattern being close to the desired pattern on the surface. The present invention also provides a method of forming a pattern in a layer.