Electron Beam Writing Correction for Irreversible Substrate Deformation

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Solution Overview

Problem

The electron beam writing technique faces challenges with positional deviation due to irreversible deformation of glass substrates during irradiation, which degrades the accuracy of pattern formation in semiconductor manufacturing, especially with the use of low-thermal expansion materials where thermal expansion is negligible.

Innovation Solution

An electron beam writing method that calculates and corrects for positional deviations by determining the first positional deviation amount caused by irreversible deformation and adjusts the beam irradiation position accordingly, using a system with a stage, positional deviation amount calculation circuit, and correction amount calculation unit to ensure accurate pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multiple beam writing is employed to increase writing throughput, then productivity is improved, but positional deviation due to substrate deformation affects all beams

Engineering Contradiction:
Improvewriting throughputVSAvoidglobal pattern position accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent segments the writing area into multiple regions and calculates the irreversible deformation amount separately for each region based on its specific dose distribution. This allows each region to have its own correction values, enabling multiple beams to operate simultaneously with individualized position corrections that account for local substrate deformation variations.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively corrects for positional deviations caused by irreversible substrate contraction, improving the global position accuracy of beam irradiation and pattern formation, even in multiple beam writing and single beam writing processes.

Implementation Method 1

irradiation with electron beams

Methodology Applied
Scientific EffectElectron beam irradiation: Electron Beam

Implementation Method 2

a reversible deformation occurs such as a thermal expansion caused by glass substrate heating due to electron beam irradiation

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS20240412945A1Electron beam writing method, electron beam writing apparatus, and non-transitory material computer-readable storage medium with programs stored therein
Publication Date: 2024.12.12 NUFLARE TECH INC
  • US20240412945A1 patent drawing
  • US20240412945A1 patent drawing
  • US20240412945A1 patent drawing

AI summary

An electron beam writing method includes calculating, in a case of writing a pattern with an electron beam on a target object which irreversibly deforms depending on a dose distribution of the electron beam, a first positional deviation amount of the pattern deviated from its design position because of an irreversible deformation of the target object after completion of writing processing, calculating, based on the first positional deviation amount, a correction amount for correcting a position of the pattern or an irradiation position of an electron beam in forming the pattern by irradiation of the electron beam on the target object, and performing, based on the correction amount, writing processing to write the pattern on the target object with an electron beam.