3D IC Electromagnetic Bandgap Structure for Noise Suppression
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Solution Overview
Problem
Simultaneously switching noise (SSN) and power/ground bounce noise (GBN) in semiconductor devices cause performance issues due to current leaks through effective inductance, leading to unwanted voltage drops and integrity problems.
Innovation Solution
The implementation of an electromagnetic bandgap (EBG) structure with through-substrate-vias (TSVs), micro bumps, and multiple conductive line layers arranged in various configurations to reduce stopband frequencies, increasing capacitance and inductance, thereby suppressing high-frequency noise in three-dimensional integrated circuit (3D IC) applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional power distribution networks are used in 3D ICs, then device integration is achieved, but simultaneously switching noise and power/ground bounce noise cause voltage drops and integrity problems
Solution Approach 1:
The patent segments the power distribution network by introducing electromagnetic bandgap structures that divide the continuous power/ground network into isolated unit cells. These EBG cells segment the noise propagation paths, preventing simultaneous switching noise and power/ground bounce from affecting the entire device, thus maintaining power and signal integrity while supporting high device integration
Solution Approach 2:
The patent introduces electromagnetic bandgap structures as intermediary elements between power/ground networks and signal lines. These EBG structures act as frequency-selective mediators that allow DC power transmission while blocking high-frequency noise, effectively filtering noise without interfering with normal power distribution and signal operation
2Object-affected harmful factors
If decoupling capacitance is increased to reduce noise, then noise suppression improves, but device area increases
Solution Approach 1:
The patent replaces the traditional mechanical/electrical approach of using large decoupling capacitance with an electromagnetic field-based solution. The electromagnetic bandgap structures utilize electromagnetic resonance and bandgap effects to suppress noise, achieving the same noise reduction function without requiring large physical capacitance, thus reducing device area while maintaining effective noise suppression
Solution Approach 2:
The patent changes the fundamental parameter approach from increasing capacitance value to modifying electromagnetic propagation characteristics. By designing EBG structures with specific geometric parameters (unit cell dimensions, conductor patterns, dielectric properties), the patent achieves noise suppression at target frequencies without the area penalty of proportional capacitance increases
3Object-affected harmful factors
If EBG structures are implemented to suppress high-frequency noise, then noise attenuation improves, but stopband frequencies remain too high for 3D IC applications
Solution Approach 1:
The patent transitions from two-dimensional EBG structures to three-dimensional configurations by stacking multiple EBG layers vertically and using through-silicon vias to connect them. This dimensional extension creates additional electromagnetic coupling paths and increases the effective electrical length, thereby lowering the resonant frequencies and shifting the stopband to lower frequencies suitable for 3D IC operating ranges
Solution Approach 2:
The patent implements nested EBG structures where smaller unit cells are embedded within larger unit cells, or multiple EBG layers are nested vertically with different geometric patterns. This nesting creates multiple resonant modes and extends the noise suppression coverage to lower frequencies, effectively lowering the stopband frequency while maintaining noise attenuation performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The EBG structure effectively reduces stopband frequencies, minimizing noise interference and the need for oversized decoupling capacitance, thereby enhancing power and signal integrity in 3D ICs.
Implementation Method 1
The EBG structure defines a frequency range called a bandgap or stopband that suppresses or greatly attenuates the propagation of electromagnetic waves within a certain frequency band
Implementation Method 2
increasing capacitance and inductance, thereby suppressing high-frequency noise in three-dimensional integrated circuit (3D IC) applications
Implementation Method 3
increasing capacitance and inductance, thereby suppressing high-frequency noise in three-dimensional integrated circuit (3D IC) applications
Data Source
AI summary
An electromagnetic bandgap (EBG) cell comprises a plurality of first conductive line layers beneath a first integrated circuit (IC) die, wherein wires on at least one of the first conductive line layers are each connected to one of a high voltage source and a low voltage source and are oriented to form a first mesh structure at a bottom of the EBG cell. The EBG cell further comprises a pair of through-substrate-vias (TSVs) above the plurality of first conductive line layers, wherein the pair of TSVs penetrate the first IC die and are connected to a high voltage source and a low voltage source, respectively, and a pair of micro bumps above a dielectric layer above the pair of TSVs, wherein the micro bumps connect the TSVs of the first IC die with a plurality of second conductive line layers formed on a second IC die.