ECC Decoder Using Syndrome and Message Checks for Memory Bit Errors

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Solution Overview

Problem

Semiconductor memory devices face increased bit errors and decreased yield due to shrinking fabrication design rules, necessitating enhanced error correction capabilities without increasing parity overhead.

Innovation Solution

An error correction code (ECC) decoder and semiconductor memory device design that generates characteristic information and syndrome vectors to detect and correct errors in codewords, using a parity check matrix to selectively correct error bits and generate flag signals, thereby enhancing error detection and correction capabilities without increasing parity overhead.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If fabrication design rules are shrunk to increase memory capacity, then storage density is improved, but bit error rate increases and yield decreases

Engineering Contradiction:
Improvememory capacityVSAvoidbit error rate
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The codeword is divided into message bits and parity bits, with the parity bits used for error detection and correction. The ECC decoder separately processes these segments to identify and correct errors without affecting the entire data set.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the parameter of error detection capability by generating characteristic information from message bits and combining it with syndrome vectors, enabling enhanced error detection without changing the physical fabrication parameters.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If traditional ECC methods are used for error correction, then error correction capability is maintained, but error detection capability is insufficient

Engineering Contradiction:
Improveerror correction capabilityVSAvoiderror detection capability
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The ECC decoder generates characteristic information from message bits and uses it as feedback in the error detection process. This feedback mechanism enables the system to distinguish between errors in message bits and parity bits, enhancing overall error detection capability.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent combines characteristic information (generated from message bits) with syndrome vectors (generated from parity check matrix operations) to create a composite error detection mechanism that is more powerful than traditional single-method ECC approaches.

Inventive Principle:
Principle #40Composite materials

3Measurement precision

If more parity bits are added to improve error detection, then error detection capability is improved, but parity overhead increases

Engineering Contradiction:
Improveerror detection capabilityVSAvoidparity overhead
Core Design Contradiction:
Measurement precisionVSQuantity of substance

Solution Approach 1:

The characteristic information generated from message bits serves multiple functions: it enhances error detection capability, helps distinguish error locations, and works in conjunction with traditional syndrome vectors. This multi-functionality allows improved error detection without adding dedicated parity bits.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

Instead of increasing the number of parity bits, the patent changes the processing parameter by generating and utilizing characteristic information from existing message bits, achieving enhanced error detection capability without increasing parity overhead.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10846171B2Error correction code decoders, semiconductor memory devices and memory systems
Publication Date: 2020.11.24 SAMSUNG ELECTRONICS CO LTD
  • US10846171B2 patent drawing
  • US10846171B2 patent drawing
  • US10846171B2 patent drawing

AI summary

An error correction code (ECC) decoder of a semiconductor memory device is provided. The ECC decoder includes an ECC checker, a syndrome generator, and an error detection/correction circuit. The ECC checker generates characteristic information representing first error information associated with message bits in an input codeword that is read from a target page in a memory cell array. The syndrome generator outputs a syndrome vector representing second error information associated with the input codeword by performing an operation on the message bits and parity bits in the input codeword based on a parity check matrix. The an error detection/correction circuit generates a transmission codeword by selectively correcting an error bit in the input codeword based on the characteristic information and the syndrome vector, generates a flag signal indicating whether the transmission codeword includes an error bit, and outputs a transmission message based on the transmission codeword.