ECC Decoder Circuit Using Shared Arithmetic to Cut DRAM Area

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Solution Overview

Problem

Existing semiconductor memory devices face challenges in reducing the area occupied by error correction code (ECC) circuits while maintaining effective error correction capabilities, particularly in DRAM devices with increasing memory capacity.

Innovation Solution

Implementing an ECC circuit with reduced circuit complexity by utilizing a common arithmetic circuit for syndrome decoding and eliminating unnecessary arithmetic circuits, based on the structure of the parity-check matrix (H-matrix), which includes an ECC encoder and decoder configured to perform operations without redundant logic.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional ECC circuits are implemented in DRAM devices with increasing memory capacity, then error correction capability is maintained, but the area occupied by the ECC circuit increases

Engineering Contradiction:
Improveerror correction capabilityVSAvoidECC circuit area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent combines multiple arithmetic operations (syndrome calculation, error pattern identification, and error correction) into a single integrated ECC circuit structure. The syndrome generator, error pattern generator, and error correction unit share common arithmetic resources and data pathways, merging previously separate functional blocks into a unified circuit that reduces overall area while maintaining full error correction capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The ECC circuit is designed with universal arithmetic units that can perform multiple functions. The same arithmetic logic is used for both syndrome calculation during encoding and for error pattern identification during decoding. This multi-functional design eliminates the need for dedicated arithmetic circuits for each function, significantly reducing the total circuit area while preserving comprehensive error correction capabilities.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If comprehensive ECC decoding operations are implemented, then error correction accuracy is improved, but device complexity increases

Engineering Contradiction:
Improveerror correction accuracyVSAvoidECC circuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The ECC decoding process is segmented into distinct functional stages: syndrome generation, error pattern identification, and error correction application. Each stage is implemented as a separate modular unit with dedicated input and output interfaces. This segmentation allows for optimized design of each individual stage while maintaining the overall accuracy of the complete decoding process, and facilitates easier verification and testing.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The circuit performs preliminary syndrome calculation and error pattern identification before the actual error correction is applied to the data. By pre-computing the syndrome and determining the error pattern in advance, the circuit prepares all necessary correction information beforehand, which simplifies the final correction step and reduces the complexity of real-time decision-making during the correction process.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20260050519A1Error correction code circuit, memory device and memory system including same
Publication Date: 2026.02.19 SAMSUNG ELECTRONICS CO LTD
  • US20260050519A1 patent drawing
  • US20260050519A1 patent drawing
  • US20260050519A1 patent drawing

AI summary

Disclosed is a memory device which includes an input/output circuit receiving first data and first parity data from a memory controller, an ECC encoder generating parity check data based on the first data, a syndrome generator generating a syndrome based on the parity check data and the first parity data, an error vector generator performing ECC decoding based on the syndrome and generating an error vector, an error correction circuit generating error-corrected data based on the error vector, the first data, and the first parity data, and a memory cell array storing the error-corrected data. The error vector generator includes an arithmetic circuit performing a common operation associated with the ECC decoding based on the syndrome and generating a common arithmetic signal, and a plurality of comparison circuits generating the error vector based on the syndrome and the common arithmetic signal.