ECC Engine Error Vector Correction for Semiconductor Memory Yield

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Solution Overview

Problem

The increasing memory capacity of semiconductor memory devices leads to a higher incidence of defective and weak memory cells, which can result in data storage errors, and existing error correction methods are insufficient to effectively address the growing number of single bit errors, hindering manufacturing yield improvements.

Innovation Solution

The implementation of an error correction circuit using an Error Correction Code (ECC) engine within semiconductor memory devices, which includes a register for storing error vectors, performs ECC decoding, and generates syndrome data to correct errors, enabling the detection and correction of single bit errors through a code validation mode.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If memory capacity is increased to provide larger storage, then storage capacity is improved, but the incidence of defective and weak memory cells increases leading to more data storage errors

Engineering Contradiction:
Improvememory capacityVSAvoiddata storage accuracy
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies preliminary action by performing ECC decoding and error detection before data is fully written to or read from the increased-capacity memory. The error correction circuit proactively identifies and corrects potential errors in defective cells before they propagate, allowing the system to safely utilize larger memory capacity while maintaining data integrity through pre-emptive error handling

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If existing error correction methods are used without enhancement, then device complexity is maintained, but the ability to correct single bit errors is insufficient leading to reduced manufacturing yield

Engineering Contradiction:
Improveerror correction circuit complexityVSAvoiderror correction capability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements feedback by using syndrome data generated from parity bits to automatically identify and correct error patterns in stored data. The error correction circuit continuously monitors data integrity through syndrome calculation and uses this feedback information to selectively correct single bit errors, thereby improving manufacturing yield without requiring proportionally complex circuitry

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The error correction circuit performs self-service by autonomously detecting and correcting its own errors using embedded parity bits and syndrome data. The system does not require external intervention for error correction, as the ECC engine automatically generates correction signals based on the syndrome data and applies them to fix single bit errors, improving reliability while maintaining acceptable device complexity

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS11239960B2Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
Publication Date: 2022.02.01 SAMSUNG ELECTRONICS CO LTD
  • US11239960B2 patent drawing
  • US11239960B2 patent drawing
  • US11239960B2 patent drawing

AI summary

A method of operating a semiconductor memory device can include receiving data, from a memory controller, at an Error Correction Code (ECC) engine included in the semiconductor memory device, the data including at least one predetermined error. Predetermined parity can be received at the ECC engine, where the predetermined parity is configured to correspond to the data without the at least one predetermined error. A determination can be made whether a number of errors in the data is correctable by the ECC engine using the data including the at least one predetermined error and the predetermined parity.