ECC Matrix Layout for Consecutive Multi-Bit SRAM Error Correction

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Solution Overview

Problem

As technology scales, single particle strikes in static random access memories (SRAMs) result in larger footprints of multi-bit errors due to increased storage cells, making conventional single-bit error correction insufficient, and double- or triple-bit correction methods costly in terms of storage and power.

Innovation Solution

A novel error correction code is developed that constructs an H-matrix for error detection and correction, allowing for double-bit correction and up to four consecutive bit detection with a small increase in ECC check bits, utilizing logic expression reuse and reduced wiring distances to minimize overhead.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If double- or triple-bit correction is used to counter multi-bit errors, then error correction capability is improved, but storage cost and power consumption increase significantly

Engineering Contradiction:
Improveerror correction capabilityVSAvoidstorage cost
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent applies local quality by differentiating between consecutive bit errors (spatially localized) and random bit errors. The error correction mechanism is optimized specifically for consecutive errors that occur due to particle strikes affecting adjacent storage cells, rather than implementing uniform correction for all possible error patterns. This localized approach reduces the overall storage overhead while maintaining effectiveness against the dominant error mode.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the parameter of error correction capability from full double- or triple-bit correction to a specialized consecutive-bit correction mechanism. By modifying the error correction code structure and parameters to specifically target consecutive bit patterns caused by particle strikes, the system achieves adequate reliability with reduced storage overhead compared to general-purpose multi-bit correction schemes.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If double- or triple-bit correction is used to counter multi-bit errors, then error correction capability is improved, but power consumption increases

Engineering Contradiction:
Improveerror correction capabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The error correction logic is optimized to handle specifically consecutive bit errors with dedicated circuitry that detects and corrects only this error pattern. This localized correction approach reduces the complexity and power consumption of the error correction unit compared to implementing full double- or triple-bit correction capabilities that would handle all possible error patterns.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs a simplified error correction mechanism that uses fewer computational resources and less complex logic circuits. By accepting that the correction mechanism only needs to handle the specific consecutive error pattern rather than all possible error patterns, the system uses a lighter-weight (lower power) correction approach that is sufficient for the dominant failure mode.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Quantity of substance

If conventional ECC is used for single-bit correction, then storage overhead is minimized, but it becomes insufficient for multi-bit errors caused by particle strikes

Engineering Contradiction:
Improvestorage overheadVSAvoiderror correction capability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent enhances the conventional ECC by adding specialized detection and correction logic for consecutive bit errors. Rather than completely replacing the ECC scheme with a more robust (but heavier) multi-bit correction code, the invention locally augments the existing ECC with targeted capabilities for handling particle-strike-induced consecutive errors, achieving improved reliability with minimal additional overhead.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10268539B2Apparatus and method for multi-bit error detection and correction
Publication Date: 2019.04.23 SK HYNIX NAND PRODUCT SOLUTIONS CORP
  • US10268539B2 patent drawing
  • US10268539B2 patent drawing
  • US10268539B2 patent drawing

AI summary

An apparatus and method are described for multi-bit error correction and detection. For example, one embodiment of a processor comprises: error detection logic to detect one or more errors in data when reading the data from a storage device, the data being read from the storage device with parity codes and error correction codes (ECCs); error correction logic to correct the errors detected by the error detection logic; and a matrix usable by both the error detection logic to detect the one or more errors and the error correction logic to correct the errors, the matrix constructed into N regions, each region having M columns forming a geometric sequence, wherein each successive region is a shifted version of a prior region.