ECC Circuit Segmentation for Mask Write Bottlenecks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor memory devices face challenges in efficiently processing mask write operations due to the requirement of both read and write operations, which can lead to bottlenecks and interference between different commands, affecting the timing and throughput of error correction and data integrity.
Innovation Solution
Implementing multiple timing domains and separate read and write buses within the error correction circuit to manage mask write operations independently, allowing for concurrent processing of multiple commands without interference, by using distinct clock domains for different components involved in the read and write paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If mask write operations are performed using shared read/write buses and timing domains, then device complexity is reduced, but bottlenecks and interference between commands occur affecting timing and throughput
Solution Approach 1:
The ECC circuit is segmented into multiple timing domains (first timing domain for read operations, second timing domain for write operations) with separate read and write buses. This segmentation allows independent operation of read and write paths, eliminating bottlenecks and interference between commands while maintaining manageable device complexity through modular organization.
2Productivity
If multiple timing domains and separate buses are implemented, then command processing throughput and timing efficiency are improved, but device complexity increases
Solution Approach 1:
The ECC circuit is divided into distinct timing domains with separate read and write buses, each handling specific operations independently. This segmentation enables parallel processing of multiple commands without interference, improving throughput while the modular structure keeps complexity manageable through clear separation of functions.
Solution Approach 2:
The first and second buses are configured to perform both read and write operations depending on the active timing domain. This multi-functionality allows the same physical infrastructure to support multiple operations, improving productivity without proportionally increasing device complexity.
Data Source
AI summary
Apparatuses, systems, and methods for error correction. A memory array may be coupled to an error correction code (ECC) circuit along a read bus and a write bus. The ECC circuit includes a read portion and a write portion. As part of a mask write operation, read data and read parity may be read out along the read bus to the read portion of the ECC circuit and write data may be received along data terminals by the write portion of the ECC circuit. The write portion of the ECC circuit may generate amended write data based on the write data and the read data, and may generate amended parity based on the read parity and the amended write data. The amended write data and amended parity may be written back to the memory array along the write bus.