ECC Memory Write Path With Dynamic Mask Command Detection
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Solution Overview
Problem
Conventional memory devices experience increased response time due to the implementation of data masking and error correction circuits, which require pre-reading time for data masking operations, hindering high-speed data processing.
Innovation Solution
A memory device and system that includes a write command determination unit to identify whether a write command is accompanied by a masking signal, allowing for immediate data modulation and error correction without waiting for a masking signal, thereby reducing response time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data masking function is implemented in conventional memory devices, then error correction capability is improved, but response time for write commands increases
Solution Approach 1:
The patent implements dynamic operation modes that can switch between normal write mode and read-modify-write mode based on command detection. The memory device dynamically adjusts its internal processing path: for normal write commands, data is written directly without pre-reading; for RMW commands, the system performs read-modify-write operations. This dynamic adaptation resolves the contradiction by eliminating unnecessary pre-reading time for commands that don't require it, while preserving error correction capability when needed.
Solution Approach 2:
The patent changes the operational parameters of the memory device based on the type of write command received. By detecting whether a write command is a normal write or an RMW command, the system adjusts processing parameters such as whether to activate the read-modify-write sequence. This parameter change allows the device to maintain reliability through selective error correction while optimizing response time by avoiding unnecessary processing steps.
2Manufacturing precision
If pre-reading time is required for data masking operations, then data accuracy is improved, but high-speed data processing is hindered
Solution Approach 1:
The system dynamically adjusts the data processing path based on command type detection. For normal write commands, the system takes a direct path that writes data immediately without pre-reading, achieving high-speed processing. For RMW commands, the system activates the read-modify-write path that ensures data accuracy through pre-reading and verification. This dynamic switching resolves the contradiction between speed and accuracy.
Solution Approach 2:
The patent applies different processing quality levels to different command types. Normal write commands receive standard processing without pre-reading, while RMW commands receive enhanced processing with pre-reading and verification steps. This local differentiation of processing quality ensures that accuracy-critical operations get thorough validation while routine operations maintain high speed, resolving the contradiction between data accuracy and processing speed.
Data Source
AI summary
A memory device, a memory system, and a method of operating the same. The memory device includes a memory cell array including a plurality of memory cells and a write command determination unit (WCDU) that determines whether a write command input to the memory device is (to be) accompanied a masking signal. The WCDU produces a first control signal if the input write command is (to be) accompanied by a masking signal. A data masking unit combines a portion of read data read from the memory cell array with a corresponding portion of input write data corresponding to the write command and generates modulation data in response to the first control signal. An error correction code (ECC) engine generates parity of the modulation data.