ECR Microwave Plasma Source With Integrated Target for Thin Film Deposition
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Solution Overview
Problem
Existing thin film deposition devices using plasma-assisted evaporation or sputtering are complex, bulky, and require precise adjustments, making them unsuitable for large surface deposits and operating efficiently over a wide pressure range.
Innovation Solution
A compact device integrating a microwave plasma generator by electronic cyclotron resonance with the target, allowing for evaporation or sputtering without the need for complex adjustments, and capable of operating over a wide pressure range, with options for heating or cooling the target and substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a plasma gun and separate crucible arrangement is used for plasma-assisted evaporation, then deposition can be achieved, but the device becomes complex and bulky requiring precise adjustment of magnetic fields and plasma gun distance
Solution Approach 1:
The patent combines the plasma generation components (microwave applicator, waveguide, magnetic structure) and the target holder into a single integrated deposition device. The target is positioned within the central passage of the waveguide structure, eliminating the need for separate plasma gun and crucible assemblies, thereby reducing device complexity while maintaining deposition capability
Solution Approach 2:
The integrated device structure serves multiple functions simultaneously: the waveguide structure guides microwaves for plasma generation, the magnetic structure confines plasma and guides field lines to the target, and the central passage houses the target holder. This multi-functional design eliminates the need for separate specialized components for each function
2Area of stationary object
If multiple separate deposition devices are used to cover large surfaces, then complete coverage is achieved, but the space required and adjustment complexity increase significantly
Solution Approach 1:
The patent integrates multiple functional components into a single deposition device that can cover large substrate areas. The magnetic structure is designed to generate field lines that extend across the target surface, and the waveguide structure is configured to provide uniform plasma distribution over a large area, eliminating the need for multiple separate devices and their complex coordination
3Reliability
If the target is negatively polarized for sputtering, then material can be deposited, but highly energetic heavy species are generated that may damage the film
Solution Approach 1:
The patent changes the electrical polarization parameter of the target from negative to positive. This parameter change fundamentally alters the plasma interaction mechanism: positive polarization attracts electrons to the target surface, generating a softer plasma environment that deposits material without the highly energetic heavy species and voltage drops associated with negative cathode polarization, thereby preventing substrate damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves efficient thin film deposition with high compactness, reduced risk of substrate damage, and the ability to handle large surfaces, while maintaining control over plasma parameters for uniform and high-quality film deposition.
Implementation Method 1
a device for producing a microwave plasma by electron cyclotron resonance
Implementation Method 2
a magnetic structure housed in said cavity, said support comprising a basket configured to house the target and positioned so that the free face of the target is in a plane of the first longitudinal end face or near said plane and so that at least part of the field lines generated by the magnetic structure cross the target
Implementation Method 3
said body comprising an annular passage for propagating a microwave electric field connected to a microwave electric field source
Implementation Method 4
In one exemplary embodiment of evaporative deposition, the target support comprises heating means in order to evaporate the target
Implementation Method 5
the target can be partially or completely evaporated by the energetic electrons of the plasma
Data Source
Figure 1~2
Figure 3~4
Figure 5A~5B
AI summary
Device (D) for electron cyclotron resonance plasma-assisted thin film deposition, comprising a device (2) for producing a plasma and a substrate (4) of a target material of the thin film, the substrate being housed in a body of the production device, the body (10) extending between a first face (14) and a second face (16), the body (10) comprising an annular passage (18) for propagation of a microwave electric field connected to a microwave electric field source, the annular passage (18) surrounding a central channel (12) of the body, and leading into the first face (14) and a magnetic structure (8), the substrate (4) comprising a basket (46) configured to house the target (C) and positioned such that the free face of the target (C) is in a plane of the first face (14), such that a portion of the field lines (B) which is generated by the magnetic structure (8) intersects the target (C), the device comprising means for evaporating or spraying the target.