Edge-Interconnected 3D IC Packaging for Multi-Sided Routing
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Solution Overview
Problem
Existing 3D ICs face scalability issues due to single-sided interconnects, limiting power and signal distribution, and heat dissipation, which are not efficiently addressed by current packaging topologies.
Innovation Solution
Implementing a 3D IC stack with semiconductor structures that utilize four untapped sidewalls for interconnections, enabling multi-sided signal and power distribution and heat dissipation, using RDL structures and flexible printed circuits for enhanced connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If single-sided interconnects are used in 3D IC packaging, then the packaging topology is simple, but the scalability, power and signal distribution efficiency, and heat dissipation are limited
Solution Approach 1:
The patent transitions from single-sided (one-dimensional interconnection) to multi-sided (three-dimensional interconnection) packaging topology. By utilizing sidewalls and multiple faces of the semiconductor package, the interconnect architecture extends into additional spatial dimensions, enabling scalable expansion of power and signal distribution networks without increasing the package footprint.
Solution Approach 2:
The packaging topology is segmented into multiple independent interconnection surfaces (top face, bottom face, and four sidewalls). Each sidewall can be independently configured with bonding pads and interconnect structures, allowing modular expansion of the interconnect network. This segmentation enables incremental scalability where each sidewall can be activated independently based on design requirements.
2Adaptability or versatility
If multi-sided interconnections are implemented, then routing areas and design flexibility increase, but the device complexity increases
Solution Approach 1:
The sidewall structures serve multiple functions simultaneously: they provide mechanical support for the package, enable electrical interconnections through bonding pads, facilitate heat dissipation pathways, and offer additional routing areas for signals. This multi-functionality increases design flexibility without proportionally increasing complexity, as a single structural element accomplishes multiple objectives.
Solution Approach 2:
The patent merges the interconnect function with the package encapsulation structure. The sidewalls that traditionally only provided mechanical protection are now integrated with bonding pads and interconnect pathways, combining structural and electrical functions into a unified multi-sided architecture that enhances flexibility while managing complexity.
3Productivity
If conventional 2D IC integration is used, then the manufacturing process is mature, but the integration density and performance are limited
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional multi-sided integration. By utilizing the vertical sidewalls and multiple faces of the package, the interconnect architecture adds spatial dimensions to the integration architecture, enabling higher integration density without requiring advanced 2D scaling that approaches physical limits.
Solution Approach 2:
The multi-sided interconnect architecture nests additional interconnection layers and pathways within the three-dimensional package structure. Rather than expanding horizontally in 2D, the interconnect network is nested within the volumetric space defined by the sidewalls and multiple faces, achieving higher integration density through spatial nesting.
Data Source
AI summary
An IC stack includes: semiconductor structures horizontally separate with each other, each semiconductor structure having a top surface, a bottom surface opposite the top surface, and four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall; the area of the bottom or top surface larger than that of any sidewall; and a laterally extending RDL structure covering the first sidewall of each semiconductor structure. A first semiconductor structure of the semiconductor structures comprises a first IC structure and a first neighboring structure separate from the first IC structure, the first IC structure and the first neighboring structure arranged along the first sidewall of the first semiconductor structure. The laterally extending RDL structure comprises bonding pads arranged along the first sidewall of the first semiconductor structure, the bonding pads over an edge of the first IC structure and an edge of the first neighboring structure.