Edge Bridge Interconnects in Multi-Chip Packages Without TSVs
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Solution Overview
Problem
Current multi-chip packages face challenges in achieving high die-to-die interconnect densities due to limitations in manufacturing organic substrates, leading to insufficient bandwidth and increased costs, particularly with the need for through-silicon vias (TSVs) and large silicon interposers.
Innovation Solution
The use of silicon bridges or other material bridges embedded in or attached to the package substrate, which support dense die-to-die interconnects from edge to edge, eliminating the need for TSVs and enabling high-density interconnects through advanced silicon process technology, along with hybrid flip-chip/wirebond assembled active satellite dies for high-speed communication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through-silicon vias (TSVs) and large silicon interposers are used to achieve high die-to-die interconnect densities, then interconnect density is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts the interconnect function from the substrate and implements it through bridges attached to die edges. This eliminates the need for TSVs and large silicon interposers, reducing manufacturing complexity while maintaining high interconnect density. The bridges are separate components that can be manufactured independently and attached to the die edges, simplifying the overall manufacturing process.
Solution Approach 2:
The interconnect structure is segmented into separate bridge components rather than being integrated into a single large substrate. Multiple small bridges can be attached to different die edges, allowing high interconnect density without requiring a large complex substrate or TSV structures. This segmentation enables independent manufacturing and assembly of interconnect elements.
2Quantity of substance
If through-silicon vias (TSVs) and large silicon interposers are used to achieve high die-to-die interconnect densities, then interconnect density is improved, but cost increases
Solution Approach 1:
The interconnect function is extracted from expensive TSV and large interposer structures and implemented through simpler, smaller bridges. These bridges can be manufactured using standard semiconductor processes and attached to die edges, significantly reducing material costs and manufacturing complexity while achieving the same or better interconnect density.
Solution Approach 2:
The patent uses small bridge structures that are simpler and cheaper to manufacture than TSVs or large silicon interposers. These bridges serve their interconnect function effectively without requiring expensive materials or complex fabrication processes, making the overall package more cost-effective while maintaining high interconnect density.
3Ease of manufacture
If conventional substrate-based interconnects are used, then manufacturing is simpler, but interconnect density is insufficient leading to limited bandwidth
Solution Approach 1:
The patent transitions from planar substrate-based interconnects to three-dimensional bridge structures attached to die edges. This dimensional change allows multiple bridges to be stacked or arranged in space, achieving high interconnect density without increasing the footprint or complexity of the manufacturing process. The bridges extend vertically or laterally from the die edges, utilizing three-dimensional space efficiently.
Solution Approach 2:
The interconnect system is divided into multiple small bridge segments attached to different die edges, rather than using a single large substrate interconnect layer. This segmentation allows each bridge to be manufactured and attached independently using simple processes, while the collective arrangement of multiple bridges achieves the required high interconnect density for sufficient bandwidth.
Data Source
AI summary
A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).