Semiconductor Edge Collector Doping for Controlled Avalanche Breakdown
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Solution Overview
Problem
Conventional semiconductor devices face challenges in optimizing the edge termination structure to prevent avalanche breakdown, which affects the breakdown voltage and reliability of the device.
Innovation Solution
The semiconductor device incorporates a P+ type edge collector region with a higher integrated carrier concentration than the edge termination structure, facilitating avalanche breakdown in the active portion while suppressing it in the edge termination portion, thereby enhancing the device's withstand capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the edge termination structure is optimized to prevent avalanche breakdown, then the breakdown voltage is improved, but the reliability deteriorates due to insufficient hole implantation efficiency
Solution Approach 1:
The patent applies local quality by creating distinct doping concentration zones within the collector region. The edge collector region has a first doping concentration while the active collector region has a second doping concentration, with the ratio controlled within specific ranges. This localized differentiation allows the edge termination structure to have different electrical properties from the active region, enabling avalanche breakdown to occur preferentially in the active portion while maintaining structural integrity and reliability.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the doping concentration ratio between edge and active collector regions. By adjusting the doping concentrations to specific ranges (first doping concentration to second doping concentration ratio within defined limits), the patent optimizes hole implantation efficiency and triggers avalanche breakdown at desired locations, thereby improving both breakdown voltage and reliability simultaneously.
2Productivity
If the P+ type edge collector region is formed with higher integrated carrier concentration, then the hole implantation efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the collector region into distinct zones: an edge collector region and an active collector region, each with different doping concentrations. This segmentation is achieved through selective doping processes that create spatially separated regions with specific electrical properties, enabling independent optimization of hole implantation efficiency in the active region while maintaining structural simplicity through a unified device architecture.
Solution Approach 2:
The patent utilizes parameter changes by controlling the doping concentration distribution across different collector regions. By adjusting the doping concentration parameters within specific ranges and maintaining the doping concentration ratio within defined limits, the patent achieves high hole implantation efficiency without requiring complex multi-layer structures or additional components, thereby balancing productivity improvement with structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the hole implantation efficiency in the active collector region, making it easier to cause avalanche breakdown in the active portion, thus improving the semiconductor device's breakdown voltage and reliability.
Implementation Method 1
facilitating avalanche breakdown in the active portion while suppressing it in the edge termination portion
Data Source
AI summary
Provided is a semiconductor device including an active portion arranged below an upper surface electrode and an edge termination structure portion arranged between the upper surface electrode and an end side of a semiconductor substrate in a top view, in which the active portion includes an active collector region, the edge termination structure portion includes an edge collector region, and an integrated value of a carrier concentration of the active collector region in a depth direction is larger than an integrated value of a carrier concentration of the edge collector region in the depth direction. An upper end position of the active collector region in the depth direction and an upper end position of the edge collector region in the depth direction may differ.