Optoelectronic Semiconductor Edge Contact Layout for Area-Efficient Flip Chips
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Solution Overview
Problem
Conventional flip chips have reduced area efficiency due to the need for rewiring to access the semiconductor layer above an active zone, which is not optimized for space utilization.
Innovation Solution
An optoelectronic semiconductor component with a layer stack comprising p-doped and n-doped semiconductor regions, where the active zone is positioned between them, and a radiation-transmissive, electrically conductive edge layer extending from the second main surface to the first main surface, allowing external electrical contacting without consuming area, thus enhancing efficiency and scalability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If electrical contacting is achieved through conventional rewiring below the semiconductor layer, then the semiconductor layer can be electrically accessed, but the area efficiency of the flip chip is reduced
Solution Approach 1:
The patent transitions from planar rewiring below the semiconductor layer to three-dimensional side-surface contacting. The conductive edge layer is applied to the side surface of the semiconductor component, extending from the first main surface to the second main surface, thereby utilizing the vertical dimension to achieve electrical contact without consuming chip area.
Solution Approach 2:
The conductive edge layer serves as an intermediary element that provides electrical contact between external contacts and the semiconductor layer. This edge layer, with its specific conductivity gradient, mediates the electrical connection while maintaining area efficiency by eliminating the need for extensive rewiring structures.
2Area of stationary object
If the conductive edge layer extends from the side surface to the main surface for external connection, then area efficiency is improved, but the manufacturing complexity increases
Solution Approach 1:
The conductive edge layer is characterized by a conductivity gradient, with higher conductivity at the first main surface and lower conductivity at the second main surface. This parameter variation allows the same layer to serve multiple functions: providing low-resistance contact paths where needed while maintaining insulation where required, thereby simplifying the overall manufacturing process.
Solution Approach 2:
The conductive edge layer performs multiple functions simultaneously: it provides electrical contact, acts as a barrier layer, and enables external connection. This multi-functionality reduces the total number of manufacturing steps and materials required, offsetting the initial complexity of creating the edge layer structure.
3Illumination intensity
If the second contact means is made radiation-transmissive for optimal light emission, then radiation emission is improved, but electrical contact reliability may be compromised
Solution Approach 1:
The conductive edge layer exhibits spatially varying properties: it has high conductivity at the first main surface for reliable electrical contact, transitions through a gradient region, and becomes radiation-transmissive at the second main surface for optimal light emission. This local differentiation allows both electrical reliability and optical performance to be optimized simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables area-optimized optoelectronic semiconductor components with improved radiation outcoupling and electrical connectivity, eliminating the need for area-consuming vias and carriers, thereby increasing efficiency and scalability.
Implementation Method 1
an active zone arranged between the first and second semiconductor regions. For example, the first semiconductor region is a p-doped region and the second semiconductor region is an n-doped region. Further, the active zone may be provided for generating electromagnetic radiation.
Implementation Method 2
an electrically insulating first dielectric layer arranged between the edge layer and the layer stack
Implementation Method 3
a second contact means arranged at the second main surface and provided for electrically contacting the second semiconductor region, the second contact means being radiation-transmissive
Data Source
AI summary
An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.