Edge Electrode Exhaust Structure for Uniform Substrate Plasma Treatment
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Solution Overview
Problem
In substrate plasma treatment, controlling pressure and gas flow in the region where plasma is generated is challenging, leading to decreased gas uniformity and plasma density, which affects processing efficiency.
Innovation Solution
A substrate treating apparatus with a housing, support unit, and gas supply system that includes a ring-shaped edge electrode with a protrusion portion for exhaust, allowing for efficient plasma generation and control of pressure and gas flow at the edge region of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the region in which plasma is generated is increased, then the plasma treatment area is expanded, but the plasma density decreases due to difficulty in controlling pressure and gas flow
Solution Approach 1:
The treating space is divided into a center region and an edge region, with separate gas supply and exhaust mechanisms for each region. The gas supply unit has first and second gas supply holes positioned at different locations, and the exhaust unit has corresponding first and second exhaust holes, allowing independent control of gas flow and pressure in each region to maintain high plasma density even when the overall treatment area is large
Solution Approach 2:
Different regions of the treating space are provided with different gas flow rates and pressure conditions optimized for their specific requirements. The edge region receives different gas supply parameters compared to the center region, allowing each area to operate at optimal plasma density conditions despite the overall large treatment area
2Area of stationary object
If the region in which plasma is generated is increased, then more substrate area is treated, but pressure control becomes difficult leading to decreased processing efficiency
Solution Approach 1:
The exhaust unit is segmented into first and second exhaust holes positioned to correspond with the center and edge regions respectively. This segmentation allows independent pressure control in each region, maintaining optimal pressure conditions for high plasma density and processing efficiency across the entire large-area substrate
Solution Approach 2:
The system employs separate gas supply and exhaust mechanisms for center and edge regions that work in coordination to maintain pressure balance. The independent control pathways allow for feedback-based adjustment of gas flow rates and exhaust rates to maintain optimal pressure conditions for high plasma density across the entire treating space
3Area of stationary object
If the region in which plasma is generated is increased, then the treatment coverage is expanded, but gas flow control becomes difficult resulting in decreased gas uniformity
Solution Approach 1:
The gas supply unit is divided into multiple gas supply holes (first and second gas supply holes) positioned at different locations within the treating space. The exhaust unit similarly has multiple exhaust holes positioned to correspond with different regions. This segmentation allows independent adjustment of gas flow rates in different areas, maintaining gas uniformity even when the overall treatment area is large
Solution Approach 2:
Different gas flow rates are supplied to different regions based on their specific requirements. The first and second gas supply holes provide different flow rates to the center and edge regions respectively, ensuring optimal gas uniformity and plasma generation conditions in each region while maintaining overall system stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively generates high-density plasma at the edge region of the substrate, ensuring uniform plasma treatment and improved processing efficiency by controlling gas flow and pressure.
Implementation Method 1
a gas supply unit configured to supply a gas which is excited to a plasma to the treating space
Implementation Method 2
The plasma is produced by a very high temperature, a strong electric field, or a high-frequency electromagnetic field
Implementation Method 3
a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space
Implementation Method 4
The ashing process or the etching process is performed by colliding or reacting ion particles and radical particles contained in the plasma with a film on the substrate
Implementation Method 5
The ashing process or the etching process is performed by colliding or reacting ion particles and radical particles contained in the plasma with a film on the substrate
Data Source
AI summary
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.