Edge-Emitting Semiconductor Laser With Segmented Contacts
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Solution Overview
Problem
Existing edge-emitting semiconductor lasers have limited ability to adjust optical output power and require complex methods for production that can damage the semiconductor body during processing.
Innovation Solution
The design features multiple contact points spaced apart by intermediate regions on the semiconductor body, allowing for independent electrical contacting and current distribution to adjust optical output power, and a method of producing edge-emitting semiconductor lasers with facets that avoids damaging the semiconductor body during severing by using a matrix-like arrangement of contact points and structuring trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a single continuous contact point is used for electrical contacting, then the electrical connection is simple, but the optical output power cannot be adjusted
Solution Approach 1:
The continuous contact point is segmented into multiple discrete contact points (at least two) spaced apart by intermediate regions. This segmentation enables independent electrical contacting of different regions, allowing adjustment of optical output power by selectively contacting specific segments while maintaining a manageable device structure.
2Productivity
If the semiconductor body is severed through intermediate regions during production, then individual lasers can be separated, but the facets are damaged
Solution Approach 1:
The semiconductor body is segmented by introducing trenches that divide intermediate regions, creating separation zones. This allows individual lasers to be separated by severing along these pre-defined paths without damaging the facet surfaces, as the trenches provide safe separation paths away from the optical paths.
Solution Approach 2:
Trenches are introduced as intermediary structures in the intermediate regions between contact points. These trenches act as mediators that facilitate the separation process by providing designated cutting paths that do not intersect with the facet surfaces, thus protecting facet quality during production.
3Ease of manufacture
If contact points are arranged in a matrix-like pattern with trenches, then production is simplified and damage is minimized, but the device structure becomes more complex
Solution Approach 1:
The device structure is segmented into modular units with contact points arranged in a matrix-like pattern separated by trenches. This segmentation simplifies manufacturing by enabling systematic production and separation of individual lasers while the modular nature keeps the overall structural complexity manageable through repetition of standardized units.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise adjustment of optical output power and simplifies the production process by minimizing damage to the semiconductor body, allowing for flexible current distribution and efficient production of edge-emitting semiconductor lasers with improved performance.
Implementation Method 1
The active zone preferably comprises a pn junction, a double heterostructure, a single quantum well (SQW, single quantum well) or a multiple quantum well (MQW, multi quantum well) structure for generating radiation.
Implementation Method 2
If the semiconductor laser is surrounded, for example, by air or another material with a lower optical refractive index than the refractive index of the active zone, the electromagnetic radiation generated by the active zone can be partially reflected at the facet/air interface.
Data Source
Figure 1A~1B
Figure 1C~1D
Figure 2A~2B
AI summary
An edge-emitting semiconductor laser (1001) is specified, having: - a semiconductor body (1) which comprises an active zone (5) suitable for producing electromagnetic radiation; - at least two facets (7) on the active zone (5), which form a resonator (55); - at least two contact points (2) which are spaced apart from one another in a lateral direction (100) by at least one intermediate region (22) and which are mounted on an outer face (11) of the semiconductor body (1).