Edge-Emitting Semiconductor with Metallic Reflective Coatings
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Solution Overview
Problem
Current semiconductor devices that emit radiation, particularly in the ultraviolet range, face challenges in achieving high efficiency and reliability due to limitations in reflective coatings and carrier generation methods, which affect their performance in applications such as water purification and medical analytics.
Innovation Solution
The development of an edge-emitting semiconductor structure with metallic reflective coatings on its facets and electron beam pumping, which allows for efficient radiation reflection and carrier generation without relying on p/n junctions, enabling enhanced performance and wider emission wavelength capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional reflective coatings are used on semiconductor device facets, then device structure is maintained, but reflectivity is insufficient and absorption losses increase
Solution Approach 1:
The patent changes the material parameter of the reflective coating from conventional dielectric materials to metallic materials (such as aluminum, silver, or gold). This parameter change fundamentally alters the optical properties of the coating, achieving high reflectivity (greater than 90%) in the ultraviolet range and reducing absorption losses, thereby resolving the contradiction between energy loss and device performance
Solution Approach 2:
The patent employs composite material structures by combining metallic reflective coatings with semiconductor active regions. The metallic coating layer is deposited on the semiconductor facets to create a hybrid structure that leverages the high reflectivity of metals and the radiation generation capability of semiconductors, simultaneously achieving low absorption losses and high device reliability
2Productivity
If p/n junctions are used for carrier generation, then conventional device architecture is maintained, but efficiency and wavelength capabilities are limited
Solution Approach 1:
The patent extracts and removes the p/n junction structure from the device architecture, replacing it with an electron beam pumping mechanism. This extraction eliminates the limitations inherent in p/n junction-based carrier generation, enabling higher efficiency and broader wavelength capabilities without being constrained by junction physics
Solution Approach 2:
The patent substitutes the electrical carrier generation mechanism (p/n junctions) with a direct physical pumping mechanism (electron beam). This substitution replaces the indirect electrical-to-optical conversion through junctions with direct electron beam-to-radiation conversion in the active region, achieving superior efficiency and wavelength control
3Loss of energy
If metallic reflective coatings are applied on facets, then radiation reflection is enhanced, but coating fabrication complexity increases
Solution Approach 1:
The patent employs thin metallic coating layers (nanometer to micrometer scale) that can be deposited using standard semiconductor fabrication techniques. These thin coatings are sufficient to achieve high reflectivity while being compatible with existing manufacturing processes, thus enhancing radiation reflection without significantly increasing fabrication complexity or cost
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high reflectivity and efficient radiation emission with reduced absorption losses, enabling improved performance in ultraviolet radiation emission and broader wavelength capabilities, thus enhancing device efficiency and applicability.
Implementation Method 1
A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.
Implementation Method 2
electron beam pumping, which allows for efficient radiation reflection and carrier generation
Implementation Method 3
An active region configured to generate radiation in response to excitation by a pumping beam incident on the structure
Data Source
AI summary
An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.


