Single-Chamber Edge Etching via Segmented Gas Distribution
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Solution Overview
Problem
Existing methods for removing films at the edge of a substrate require multiple process chambers, reducing throughput and increasing time and expense due to the need for separate chambers for deposition and etching processes.
Innovation Solution
A substrate processing apparatus with a susceptor and gas distribution device that provides etch gas below the substrate, forming a plasma at the perimeter to selectively remove the film at the edge without affecting the center, using a flow control ring to direct the plasma and etch gas, and optionally including an electrostatic chuck and heater.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bevel etcher is used to remove the film at the edge of the substrate, then the film delamination issue is resolved, but the process requires two separate process chambers which reduces throughput and increases time and expense
Solution Approach 1:
The patent combines the deposition chamber and etching chamber into a single integrated chamber. The gas distribution device can switch between providing deposition gas and etch gas, allowing both film deposition and edge etching to be performed in the same chamber without requiring substrate transfer between chambers, thereby resolving the technical contradiction between reliability and productivity
Solution Approach 2:
The gas distribution device is designed to perform multiple functions: it can distribute deposition gas for film formation and etch gas for edge etching. This multi-functional design eliminates the need for separate specialized chambers, maintaining film integrity while improving throughput by performing both operations in one chamber
2Reliability
If a bevel etcher is used to remove the film at the edge of the substrate, then the film delamination issue is resolved, but the process requires two separate process chambers which increases equipment cost
Solution Approach 1:
The patent merges the deposition and etching functions into a single chamber by using a multi-functional gas distribution device that can switch between different gas modes, thereby reducing the number of chambers from two to one and simplifying the overall system
Solution Approach 2:
The gas distribution device is designed as a universal component that can handle both deposition and etching operations. By making this single component multi-functional, the patent eliminates the need for separate specialized chambers, reducing device complexity while maintaining the ability to prevent film delamination
3Manufacturing precision
If etch gas is provided below the substrate, then selective etching at the edge is achieved without affecting the center, but requires precise gas distribution control
Solution Approach 1:
The gas distribution system is segmented into different regions: the etch gas channel in the susceptor directs etch gas specifically to the edge region below the substrate, while the gas distribution device above controls the center region. This spatial segmentation enables selective etching at the edge without affecting the center, achieving manufacturing precision through targeted gas delivery
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for efficient and cost-effective selective etching of the substrate edge within a single process chamber, eliminating the need for multiple tools and improving process efficiency by maintaining the film integrity at the center while removing it at the edge.
Implementation Method 1
forming a plasma at the perimeter of the substrate
Data Source
AI summary
Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.