Edge-Modulated 2D Channel Material for Low Contact Resistance
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Solution Overview
Problem
Conventional semiconductor fabrication processes face challenges in scaling down multi-gate transistors due to high contact resistance in 2D materials, limiting further miniaturization and performance enhancement in integrated circuits.
Innovation Solution
The implementation of edge growth or doping techniques to modify 2D transition metal dichalcogenide (TMD) films, creating metallic or semi-metallic edges to reduce contact resistance while maintaining high-quality channel materials, such as using tellurium-based processes to form low-resistance contacts for 2D semiconducting channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional fabrication processes are used for scaling multi-gate transistors, then manufacturing cost and compatibility with existing infrastructure are maintained, but contact resistance increases and device performance deteriorates
Solution Approach 1:
The patent applies local quality by creating edge-modulated 2D channel material where the edges have different properties than the bulk. Specifically, the edges are modified to be more metallic while the bulk remains semiconducting, which locally optimizes the edge regions for low-resistance contacts while preserving the semiconducting behavior needed for transistor operation in the bulk region.
Solution Approach 2:
The patent employs parameter changes by altering the electronic properties of the 2D material at the edges through modification of the material composition or structure. This changes the local electrical parameters (conductivity, work function) at the edges to reduce contact resistance, while maintaining appropriate parameters in the bulk for proper transistor functionality.
2Productivity
If transistor dimensions are reduced to increase device density, then capacity increases, but fabrication constraints become overwhelming and process variability increases
Solution Approach 1:
By creating edge-modulated 2D channel material with distinct edge and bulk properties, the invention enables better control over contact characteristics independent of bulk channel properties. This local differentiation allows for optimized contact regions that can accommodate scaling challenges without compromising overall device performance or increasing fabrication complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively decreases contact resistance, enabling the scaling of transistor technology, increasing output and performance by improving the integration of 2D materials in integrated circuits.
Implementation Method 1
The implementation of edge growth or doping techniques to modify 2D transition metal dichalcogenide (TMD) films, creating metallic or semi-metallic edges
Implementation Method 2
The implementation of edge growth or doping techniques to modify 2D transition metal dichalcogenide (TMD) films
Data Source
Figure 1A
Figure 1B
Figure 1C~1D
AI summary
Thin film transistors having edge-modulated two-dimensional (2D) channel material are described. In an example, an integrated circuit structure includes a device layer including a two-dimensional (2D) material layer above a substrate (152), the 2D material layer including a center portion (154) and first (156) and second (158) edge portions, the center portion consisting essentially of molybdenum or tungsten and of sulfur or selenium, and the first and second edge portions including molybdenum or tungsten and including tellurium.