Edge Plasma Electrode Layout for Adjustable Bevel Etching

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Solution Overview

Problem

Existing substrate treatment methods, such as bevel etching, face inefficiencies due to the inability to quickly adjust the size and position of the plasma generation region, limiting treatment flexibility and efficiency.

Innovation Solution

An apparatus and method that includes a support unit with a chuck, an upper edge electrode, a lower edge electrode, and an insulating ring, allowing for precise control of plasma generation by adjusting the distance between these components using a piezoelectric motor to move the insulating ring, thereby controlling plasma density and region size and position.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the size and position of the process region are adjusted by replacing a component of the bevel etching apparatus, then the plasma generation region can be changed, but the substrate treatment efficiency decreases due to the time consumed to replace the component

Engineering Contradiction:
Improveadjustability of plasma generation regionVSAvoidsubstrate treatment efficiency
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The patent implements a movable component that can be dynamically adjusted in position and size during substrate treatment. The support unit includes a movable component that can change the size and position of the process region without requiring component replacement, thereby maintaining substrate treatment efficiency while providing adaptability.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the physical parameters of the existing apparatus by introducing a movable component that can be positioned at different locations and configured with different sizes. This allows the plasma generation region to be adjusted by changing the position and dimensions of the movable component rather than replacing entire components.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If the size and position of the process region are changed during substrate treatment, then treatment flexibility improves, but with existing schemes it is impossible to change the size and position or the range of change is quite limited

Engineering Contradiction:
Improveflexibility of treatment conditionsVSAvoidcomplexity of adjustment mechanism
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The movable component serves multiple functions: it acts as both a support structure and a plasma generation region boundary. By moving this single component, the system can adjust both the size and position of the process region, providing universal control without requiring multiple specialized adjustment mechanisms.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent replaces complex mechanical component replacement systems with a simpler movable component that can be repositioned during treatment. This substitution reduces device complexity while maintaining or enhancing the ability to change process region characteristics.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient and flexible treatment of substrates by allowing real-time adjustment of plasma generation parameters, improving treatment efficiency and control over the plasma flow.

Implementation Method 1

a piezoelectric motor to move the insulating ring

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

a power source member to generate plasma by exciting a gas

Methodology Applied
Scientific EffectPlasma generation: Plasma

Data Source

PatentUS12424417B2Substrate processing apparatus and substrate processing method
Publication Date: 2025.09.23 PSK INC
  • US12424417B2 patent drawing
  • US12424417B2 patent drawing
  • US12424417B2 patent drawing

AI summary

The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.